Ion energy control in an industrial ICP etch chamber without bias power usage

2022 ◽  
Vol 40 (1) ◽  
pp. 012203
Author(s):  
Michael Klick ◽  
Hans-Peter Maucher
Keyword(s):  
Energy Control ◽  
Bias Power ◽  
Ion Energy

scholarly journals Ion energy control via the electrical asymmetry effect to tune coating properties in reactive radio frequency sputtering

2019 ◽  
Vol 28 (11) ◽  
pp. 114001 ◽  
Author(s):  
Stefan Ries ◽  
Lars Banko ◽  
Marcus Hans ◽  
Daniel Primetzhofer ◽  
Jochen M Schneider ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Coating Properties ◽  
Energy Control ◽  
Ion Energy ◽  
Asymmetry Effect ◽  
Radio Frequency Sputtering

Effects of Ion Energy Control on Production of Nitrogen–C60Compounds by Ion Implantation

2006 ◽  
Vol 45 (10B) ◽  
pp. 8340-8343 ◽  
Author(s):  
Shigeyuki Abe ◽  
Genta Sato ◽  
Toshiro Kaneko ◽  
Takamichi Hirata ◽  
Rikizo Hatakeyama ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Energy Control ◽  
Ion Energy

scholarly journals Dual-Frequency RF Impedance Matching Circuits for Semiconductor Plasma Etch Equipment

Electronics ◽  
2021 ◽  
Vol 10 (17) ◽  
pp. 2074
Author(s):  
Jeongsu Lee ◽  
Sangjeen Hong
Keyword(s):  
Impedance Control ◽  
Impedance Matching ◽  
Low Frequency ◽  
Electrode Impedance ◽  
Dual Frequency ◽  
Plasma Etch ◽  
Bias Power ◽  
Ion Energy ◽  
Specific Frequency ◽  
Frequency Power

The change in electrode impedance of semiconductor equipment due to repetitive processes is a major issue that creates process drift. In the current plasma etch chamber with a dual-frequency power system, the high-powered radio frequency (RF) source contributes to the enhancement of the plasma density, and the low-frequency bias power at the bottom electrode is adopted to enhance the injected ion energy in the plasma. The impedance control of the top electrode in dual-frequency capacity coupled plasma limits the impedance matching capability of the RF matching system because it only considers the high-frequency RF source. To control the precise impedance in dual-frequency semiconductor equipment, independent impedance control is required for each frequency. In this study, the impedance corresponding to a specific frequency was independently controlled using L (inductor) and C (capacitor). A 60 MHz stop filter and VVC were used to control 2 MHz impedance at a specific point, and a 2 MHz stop filter and VVC were used to control 60 MHz impedance. In the case of 2 MHz impedance control, the 2 MHz impedance changed from 10.9−j893 to 0.3−j62 and the 60 MHz impedance did not change. When controlling the 60 MHz impedance, the 60 MHz impedance changed from 0.33 + j26.53 to 0.2 + j190 and the 2 MHz impedance did not change. The designed LC circuits cover the impedance of 60 and 2 MHz separately and are verified by the change in the capacitance of the vacuum variable capacitors implemented in the RF impedance matching system.

Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films

2018 ◽  
Vol 660 ◽  
pp. 865-870 ◽  
Author(s):  
Shinya Iwashita ◽  
Kazuki Denpoh ◽  
Munehito Kagaya ◽  
Takamichi Kikuchi ◽  
Naotaka Noro ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Energy Control ◽  
Ion Energy ◽  
Titanium Dioxide Films ◽  
Layer Deposition

Ion energy control in an insulating inductively coupled discharge reactor

1997 ◽  
Vol 70 (15) ◽  
pp. 1950-1952 ◽  
Author(s):  
Brian A. Smith ◽  
Lawrence J. Overzet
Keyword(s):  
Energy Control ◽  
Ion Energy ◽  
Inductively Coupled

scholarly journals Precise ion energy control with tailored waveform biasing for atomic scale processing

2020 ◽  
Vol 128 (21) ◽  
pp. 213301
Author(s):  
Tahsin Faraz ◽  
Yuri G. P. Verstappen ◽  
Marcel A. Verheijen ◽  
Nicholas J. Chittock ◽  
Javier Escandon Lopez ◽  
...  
Keyword(s):  
Atomic Scale ◽  
Energy Control ◽  
Ion Energy
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