Band alignment modulation of atomic layer deposition-prepared Al2O3/β-Ga2O3 heterojunction interface by deposition temperature

2021 ◽  
Vol 39 (3) ◽  
pp. 030403
Author(s):  
Shun Zhou ◽  
Hao Liu ◽  
Linpeng Dong ◽  
Weiguo Liu ◽  
Shigeng Song ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Band Alignment ◽  
Layer Deposition

scholarly journals Positive onset potential and stability of Cu2O-based photocathodes in water splitting by atomic layer deposition of a Ga2O3buffer layer

2015 ◽  
Vol 8 (5) ◽  
pp. 1493-1500 ◽  
Author(s):  
Changli Li ◽  
Takashi Hisatomi ◽  
Osamu Watanabe ◽  
Mamiko Nakabayashi ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Energy Band ◽  
Deposition Temperature ◽  
Atomic Layer ◽  
Band Alignment ◽  
Onset Potential ◽  
Layer Deposition

The improved energy band alignment of Pt/TiO2/Ga2O3/Cu2O structure results in a positive onset potential of ∼1 Vvs.RHE and a stable cathodic photocurrent under appropriate TiO2deposition temperature.

Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature

2004 ◽  
Vol 19 (11) ◽  
pp. 3353-3358 ◽  
Author(s):  
Titta Aaltonen ◽  
Mikko Ritala ◽  
Yung-Liang Tung ◽  
Yun Chi ◽  
Kai Arstila ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Crystal Orientation ◽  
Deposition Temperature ◽  
Noble Metals ◽  
Film Growth ◽  
Atomic Layer ◽  
Temperature Limit ◽  
Pure Oxygen ◽  
Layer Deposition

The low limit of the deposition temperature for atomic layer deposition (ALD) of noble metals has been studied. Two approaches were taken; using pure oxygen instead of air and using a noble metal starting surface instead of Al2O3. Platinum thin films were obtained by ALD from MeCpPtMe3 and pure oxygen at deposition temperature as low as 200 °C, which is significantly lower than the low-temperature limit of300 °C previously reported for the platinum ALD process in which air was used as the oxygen source. The platinum films grown in this study had smooth surfaces, adhered well to the substrate, and had low impurity contents. ALD of ruthenium, on the other hand, took place at lower deposition temperatures on an iridium seed layer than on an Al2O3 layer. On iridium surface, ruthenium films were obtained from RuCp2 and oxygen at 225 °C and from Ru(thd)3 and oxygen at 250 °C, whereas no films were obtained on Al2O3 at temperatures lower than 275 and 325 °C, respectively. The crystal orientation of the ruthenium films was found to depend on the precursor. ALD of palladium from a palladium β-ketoiminate precursor and oxygen at 250 and 275 °C was also studied. However, the film-growth rate did not saturate to a constant level when the precursor pulse times were increased.

Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

2019 ◽  
Vol 1 (4) ◽  
pp. 617-624 ◽  
Author(s):  
Seung Min Lee ◽  
Yoonseo Jang ◽  
Jongho Jung ◽  
Jung Hwan Yum ◽  
Eric S. Larsen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Band Alignment ◽  
Interface Defects ◽  
Layer Deposition

scholarly journals Modification of 1D TiO2 nanowires with GaOxNy by atomic layer deposition for TiO2@GaOxNy core–shell nanowires with enhanced photoelectrochemical performance

Nanoscale ◽  
2020 ◽  
Vol 12 (13) ◽  
pp. 7159-7173 ◽  
Author(s):  
Jia-Jia Tao ◽  
Hong-Ping Ma ◽  
Kai-Ping Yuan ◽  
Yang Gu ◽  
Jian-Wei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Light Absorption ◽  
Atomic Layer ◽  
Band Alignment ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Tio2 Nanowires ◽  
Layer Deposition ◽  
Shell Nanowires

The excellent PEC activity of TiO2 nanowires with GaOxNy results from the enhanced light absorption, favourable band alignment, and high reducibility.

Non-laminated growth of chlorine-doped zinc oxide films by atomic layer deposition at low temperatures

2015 ◽  
Vol 3 (32) ◽  
pp. 8336-8343 ◽  
Author(s):  
Yong-June Choi ◽  
Kyung-Mun Kang ◽  
Hong-Sub Lee ◽  
Hyung-Ho Park
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Deposition Temperature ◽  
Oxide Films ◽  
Atomic Layer ◽  
Zinc Oxide Films ◽  
Chlorine Doping ◽  
Layer Deposition ◽  
Low Deposition Temperature

Chlorine doping in a ZnO matrix to a concentration of 0.65 ± 0.05 at% was accomplished via atomic layer deposition using a home-made chlorine source at a low deposition temperature of 140 °C.

Band alignment of BeO gate dielectric grown by atomic-layer deposition on AlGaN/GaN HEMTs

2020 ◽  
Vol 505 ◽  
pp. 144107
Author(s):  
Seung Min Lee ◽  
Do Hwan Jung ◽  
Seonno Yoon ◽  
Yoonseo Jang ◽  
Jung Hwan Yum ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Band Alignment ◽  
Layer Deposition ◽  
Gan Hemts
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