Band alignment of BeO gate dielectric grown by atomic-layer deposition on AlGaN/GaN HEMTs

2020 ◽  
Vol 505 ◽  
pp. 144107
Author(s):  
Seung Min Lee ◽  
Do Hwan Jung ◽  
Seonno Yoon ◽  
Yoonseo Jang ◽  
Jung Hwan Yum ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Band Alignment ◽  
Layer Deposition ◽  
Gan Hemts

Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3

2018 ◽  
Vol 924 ◽  
pp. 490-493 ◽  
Author(s):  
Muhammad I. Idris ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
3 Dimensional ◽  
Layer Deposition ◽  
Show Evidence ◽  
Flatband Voltage

3-Dimensional 4H-SiC metal-oxide-semiconductor capacitors have been fabricated to determine the effect of the sidewall on the characteristics of 3-Dimentional gate structures. Al2O3 deposited by Atomic Layer Deposition (ALD) was used as the gate dielectric layer on the trench structure. The 3-D MOS capacitors exhibit increasing accumulation capacitance with excellent linearity as the sidewall area increases, indicating that ALD results in a highly conformal dielectric film. The capacitance – voltage characteristics also show evidence of a second flatband voltage, located at a higher bias than that seen for purely planar devices on the same sample. We also observe that the oxide capacitance of planar and 3-D MOS capacitors increases with temperature. Finally, we have found that the 3-D MOS capacitor has a weaker temperature dependence of flatband voltage in comparison to the conventional planar MOS capacitor due to the incorporation of the (1120) plane in the sidewall.

Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As

2006 ◽  
Vol 89 (24) ◽  
pp. 242911 ◽  
Author(s):  
C.-H. Chang ◽  
Y.-K. Chiou ◽  
Y.-C. Chang ◽  
K.-Y. Lee ◽  
T.-D. Lin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Self Cleaning

Crystalline BeO Grown on 4H-SiC via Atomic Layer Deposition: Band Alignment and Interface Defects

2019 ◽  
Vol 1 (4) ◽  
pp. 617-624 ◽  
Author(s):  
Seung Min Lee ◽  
Yoonseo Jang ◽  
Jongho Jung ◽  
Jung Hwan Yum ◽  
Eric S. Larsen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Band Alignment ◽  
Interface Defects ◽  
Layer Deposition

scholarly journals Modification of 1D TiO2 nanowires with GaOxNy by atomic layer deposition for TiO2@GaOxNy core–shell nanowires with enhanced photoelectrochemical performance

Nanoscale ◽  
2020 ◽  
Vol 12 (13) ◽  
pp. 7159-7173 ◽  
Author(s):  
Jia-Jia Tao ◽  
Hong-Ping Ma ◽  
Kai-Ping Yuan ◽  
Yang Gu ◽  
Jian-Wei Lian ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Light Absorption ◽  
Atomic Layer ◽  
Band Alignment ◽  
Core Shell ◽  
Photoelectrochemical Performance ◽  
Tio2 Nanowires ◽  
Layer Deposition ◽  
Shell Nanowires

The excellent PEC activity of TiO2 nanowires with GaOxNy results from the enhanced light absorption, favourable band alignment, and high reducibility.

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