Controlling conduction band alignment and carrier concentration in gallium-doped magnesium zinc oxide by reactive cosputtering

2021 ◽  
Vol 39 (2) ◽  
pp. 022802
Author(s):  
Gavin Yeung ◽  
Colin A. Wolden
Keyword(s):  
Zinc Oxide ◽  
Carrier Concentration ◽  
Conduction Band ◽  
Band Alignment ◽  
Magnesium Zinc Oxide

Low Temperature Deposition of Zinc Oxide Films

2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay
Keyword(s):  
Zinc Oxide ◽  
Carrier Concentration ◽  
Vacuum Arc ◽  
Zno Films ◽  
Al Alloy ◽  
Pure Zinc ◽  
Zinc Oxide Films ◽  
Alloy Target ◽  
Temperature Deposition ◽  
Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

scholarly journals Band alignment of monolayer CaP3, CaAs3, BaAs3 and the role of p–d orbital interactions in the formation of conduction band minima

2021 ◽  
Vol 23 (12) ◽  
pp. 7418-7425
Author(s):  
Magdalena Laurien ◽  
Himanshu Saini ◽  
Oleg Rubel
Keyword(s):  
Electronic Structure ◽  
Conduction Band ◽  
Electron Affinity ◽  
Band Alignment ◽  
Orbital Interactions

We calculate the band alignment of the newly predicted phosphorene-like puckered monolayers with G0W0 according to the electron affinity rule and examine trends in the electronic structure. Our results give guidance for heterojunction design.

scholarly journals Photoluminescence properties of hybrid perovskites in solar cells with TiO2 and Mg0.2Zn0.8O electron transport layers

2020 ◽  
Vol 60 (3) ◽  
Author(s):  
Aurimas Čerškus ◽  
Steponas Ašmontas ◽  
Kazimieras Petrauskas ◽  
Algirdas Sužiedėlis ◽  
Jonas Gradauskas ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electron Transport ◽  
Continuous Wave ◽  
Excitation Power ◽  
Photoluminescence Properties ◽  
Magnesium Zinc Oxide ◽  
Perovskite Layer ◽  
Temporal Decay ◽  
Carrier Recombination ◽  
Hybrid Perovskite

This paper presents a study of the photoluminescence properties of hybrid perovskite films deposited on titanium and magnesium zinc oxide films, as electron transport layers, using the spin-coating technique. The subject of the investigation was continuous wave photoluminescence versus temperature, excitation power and transient photoluminescence. Moreover, the paper discusses possible carrier recombination mechanisms. Complex temporal decay was approximated through the use of several models, but only the four-exponent model and the model using the sum of two hyperbolic functions provided a good agreement with the experimental data. The first attempt to replace titanium dioxide with magnesium zinc oxide in conjunction with the perovskite layer showed improved optical properties such as a weaker non-radiative recombination process and a longer decay time constant.

scholarly journals Stable magnesium zinc oxide by reactive Co-Sputtering for CdTe-based solar cells

2020 ◽  
Vol 210 ◽  
pp. 110521 ◽  
Author(s):  
Yegor Samoilenko ◽  
Gavin Yeung ◽  
Amit H. Munshi ◽  
Ali Abbas ◽  
Carey L. Reich ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Solar Cells ◽  
Magnesium Zinc Oxide

scholarly journals Roles of bandgrading, lifetime, band alignment, and carrier concentration in high-efficiency CdSeTe solar cells

2020 ◽  
Vol 128 (5) ◽  
pp. 053102 ◽  
Author(s):  
X. Zheng ◽  
E. Colegrove ◽  
J. N. Duenow ◽  
J. Moseley ◽  
W. K. Metzger
Keyword(s):  
Solar Cells ◽  
Carrier Concentration ◽  
High Efficiency ◽  
Band Alignment

Charge Transfer from PbS Quantum Dots to Insulating TiO2 Matrix

1995 ◽  
Vol 382 ◽  
Author(s):  
R. Könenkamp ◽  
P. Hoyer
Keyword(s):  
Conduction Band ◽  
Quantum Confinement ◽  
Visible Spectrum ◽  
Spatial Separation ◽  
Band Alignment ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Carrier Transfer ◽  
Quantum Size ◽  
Pbs Quantum Dots

ABSTRACTWe report on the photoconductivity of thin films consisting of a porous nanocrystalline TiO2 matrix and quantum size PbS clusters adsorbed on the inner surfaces of theTiO2. The PbS clusters are typically a few nm in size and are not connected. Due to quantum confinement the bandgap of the clusters is widened to around 2 eV from the 0.41 eV value for PbS bulk. The clusters thus absorb in the visible spectrum. However, due to their spatial separation, photoconductance through the film requires carrier transfer through the TiO2 matrix. Our data show this to occur only for clusters <25 Å, for which the conduction band edge lies above the TiO2 conduction band edge. For larger clusters the band alignment at the TiO2/PbS interface appears to be unfavorable for carrier transfer; these clusters do not contributeto photoconduction.

Study of Band Alignment at CBD-CdS/Cu(In1-xGax)Se2 (x = 0.2 - 1.0) Interfaces by Photoemission and Inverse Photoemission Spectroscopy

2007 ◽  
Vol 1012 ◽  
Author(s):  
Shimpei Teshima ◽  
Hirotake Kashiwabara ◽  
Keimei Masamoto ◽  
Kazuya Kikunaga ◽  
Kazunori Takeshita ◽  
...  
Keyword(s):  
Band Gap ◽  
Conduction Band ◽  
Valence Band Maximum ◽  
Band Gap Energy ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Gap Energy ◽  
Conduction Band Offset ◽  
Inverse Photoemission ◽  
Inverse Photoemission Spectroscopy

AbstractDependence of band alignments at interfaces between CdS by chemical bath deposition and Cu(In1-xGax)Se2 by conventional 3-stage co-evaporation on Ga substitution ratio x from 0.2 to 1.0 has been systematically studied by means of photoemission spectroscopy (PES) and inverse photoemission spectroscopy (IPES). For the specimens of the In-rich CIGS, conduction band minimum (CBM) by CIGS was lower than that of CdS. Conduction band offset of them was positive about +0.3 ~ +0.4 eV. Almost flat conduction band alignment was realized at x = 0.4 ~ 0.5. On the other hand, at the interfaces over the Ga-rich CIGS, CBM of CIGS was higher than that of CdS, and CBO became negative. The present study reveals that the decrease of CBO with a rise of x presents over the wide rage of x, which results in the sign change of CBO around 0.4 ~ 0.45. In the Ga-rich interfaces, the minimum of band gap energy, which corresponded to energy spacing between CBM of CdS and valence band maximum of CIGS, was almost identical against the change of band gap energy of CIGS. Additionally, local accumulation of oxygen related impurities was observed at the Ga-rich samples, which might cause the local rise of band edges in central region of the interface.

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