scholarly journals Roles of bandgrading, lifetime, band alignment, and carrier concentration in high-efficiency CdSeTe solar cells

2020 ◽  
Vol 128 (5) ◽  
pp. 053102 ◽  
Author(s):  
X. Zheng ◽  
E. Colegrove ◽  
J. N. Duenow ◽  
J. Moseley ◽  
W. K. Metzger
2018 ◽  
Vol 123 (15) ◽  
pp. 155701 ◽  
Author(s):  
Johannes Schoneberg ◽  
Jörg Ohland ◽  
Patrick Eraerds ◽  
Thomas Dalibor ◽  
Jürgen Parisi ◽  
...  

2020 ◽  
Vol 212 ◽  
pp. 110581 ◽  
Author(s):  
Iman Gharibshahian ◽  
Ali A. Orouji ◽  
Samaneh Sharbati

Author(s):  
Samer H. Zyoud ◽  
Ahed H. Zyoud ◽  
Naser M. Ahmed ◽  
Atef Abdekader

Cadmium telluride (CdTe), a metallic dichalcogenide material, has been utilized as an absorber layer for thin film-based solar cells with appropriate configurations, and the SCAPS-1D structures program has been used to evaluate the results. In both known and developing thin film photovoltaic systems, a CdS thin film buffer layer has been frequently employed as a traditional n-type heterojunction partner. In this study, numerical simulation was used to find a suitable non-toxic material for the buffer layer instead of CdS, among various types of buffer layers (ZnSe, ZnO, ZnS, and In2S3), and carrier concentrations for the absorber layer (NA) and buffer layer (ND) were varied to determine the optimal simulation parameters. carrier concentrations (NA from 2 x 1012 cm-3 to 2 x 1017 cm-3 and ND from 1 x 1016 cm-3 to 1 x 1022 ??−3) have been differed. The results showed that the CdS as buffer layer based CdTe absorber layer solar cell has the highest efficiency (?%) of 17.43%. Furthermore, high conversion efficiencies of 17.42% and 16.27% have been found for ZnSe and ZnO based buffer layers, respectively. As a result, ZnO and ZnSe are potential candidates for replacing the CdS buffer layer in thin-film solar cells. Here, the absorber (CdTe) and buffer (ZnSe) layers were chosen to improve the efficiency by finding the optimal density of the carrier concentration (acceptor and donor). The simulation findings above provide helpful recommendations for fabricating high-efficiency metal oxide-based solar cells in the lab.


2016 ◽  
Vol 157 ◽  
pp. 266-275 ◽  
Author(s):  
J.M. Kephart ◽  
J.W. McCamy ◽  
Z. Ma ◽  
A. Ganjoo ◽  
F.M. Alamgir ◽  
...  

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Antonino Parisi ◽  
Riccardo Pernice ◽  
Vincenzo Rocca ◽  
Luciano Curcio ◽  
Salvatore Stivala ◽  
...  

We demonstrate an innovative CIGS-based solar cells model with a graded doping concentration absorber profile, capable of achieving high efficiency values. In detail, we start with an in-depth discussion concerning the parametrical study of conventional CIGS solar cells structures. We have used the wxAMPS software in order to numerically simulate cell electrical behaviour. By means of simulations, we have studied the variation of relevant physical and chemical parameters—characteristic of such devices—with changing energy gap and doping density of the absorber layer. Our results show that, in uniform CIGS cell, the efficiency, the open circuit voltage, and short circuit current heavily depend on CIGS band gap. Our numerical analysis highlights that the band gap value of 1.40 eV is optimal, but both the presence of Molybdenum back contact and the high carrier recombination near the junction noticeably reduce the crucial electrical parameters. For the above-mentioned reasons, we have demonstrated that the efficiency obtained by conventional CIGS cells is lower if compared to the values reached by our proposed graded carrier concentration profile structures (up to 21%).


Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1454 ◽  
Author(s):  
Samer H. Zyoud ◽  
Ahed H. Zyoud ◽  
Naser M. Ahmed ◽  
Atef F. I. Abdelkader

Cadmium telluride (CdTe), a metallic dichalcogenide material, was utilized as an absorber layer for thin film–based solar cells with appropriate configurations and the SCAPS–1D structures program was used to evaluate the results. In both known and developing thin film photovoltaic systems, a CdS thin–film buffer layer is frequently employed as a traditional n–type heterojunction partner. In this study, numerical simulation was used to determine a suitable non–toxic material for the buffer layer that can be used instead of CdS, among various types of buffer layers (ZnSe, ZnO, ZnS and In2S3) and carrier concentrations for the absorber layer (NA) and buffer layer (ND) were varied to determine the optimal simulation parameters. Carrier concentrations (NA from 2 × 1012 cm−3 to 2 × 1017 cm−3 and ND from 1 × 1016 cm−3 to 1 × 1022 cm−3) differed. The results showed that the use of CdS as a buffer–layer–based CdTe absorber layer for solar cell had the highest efficiency (%) of 17.43%. Furthermore, high conversion efficiencies of 17.42% and 16.27% were for the ZnSe and ZnO-based buffer layers, respectively. As a result, ZnO and ZnSe are potential candidates for replacing the CdS buffer layer in thin–film solar cells. Here, the absorber (CdTe) and buffer (ZnSe) layers were chosen to improve the efficiency by finding the optimal density of the carrier concentration (acceptor and donor). The simulation findings above provide helpful recommendations for fabricating high–efficiency metal oxide–based solar cells in the lab.


Solar Energy ◽  
2018 ◽  
Vol 162 ◽  
pp. 637-645 ◽  
Author(s):  
Dezhao Wang ◽  
Ruilong Yang ◽  
Lingling Wu ◽  
Kai Shen ◽  
Deliang Wang

ChemSusChem ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 2318-2325 ◽  
Author(s):  
Weidong Zhu ◽  
Zeyang Zhang ◽  
Wenming Chai ◽  
Qianni Zhang ◽  
Dazheng Chen ◽  
...  

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