scholarly journals Sticking coefficients of selenium and tellurium

2021 ◽  
Vol 39 (2) ◽  
pp. 023413
Author(s):  
Derrick S. H. Liu ◽  
Maria Hilse ◽  
Roman Engel-Herbert
Keyword(s):  
Sticking Coefficients

scholarly journals Desorption rates and sticking coefficients for CO and N2 interstellar ices

2006 ◽  
Vol 449 (3) ◽  
pp. 1297-1309 ◽  
Author(s):  
S. E. Bisschop ◽  
H. J. Fraser ◽  
K. I. Öberg ◽  
E. F. van Dishoeck ◽  
S. Schlemmer
Keyword(s):  
Interstellar Ices ◽  
Sticking Coefficients

Improved Conformality of CVD Titanium Nitride Films

1998 ◽  
Vol 555 ◽  
Author(s):  
Xinye Liu ◽  
Yuan Z. LU ◽  
Roy G. Gordon
Keyword(s):  
Titanium Nitride ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Nitrogen Gas ◽  
Silicon Dioxide Layer ◽  
Ammonia Gas ◽  
Tin Films ◽  
Step Coverage ◽  
Novel Approach ◽  
Sticking Coefficients

AbstractWe demonstrate a novel approach to improving the step coverage of thin films made by chemical vapor deposition (CVD). Titanium nitride (TiN) films were deposited by atmospheric pressure CVD using tetrakis(diethylamido)titanium vapor (TDEAT) and ammonia gas (NH3) carried in nitrogen gas. Trimethylamine (NMe3) gas was added during some of the depositions. The substrates were patterned silicon wafers having holes with aspect ratio of 3.5 through a silicon dioxide layer. We discovered that the step coverage was significantly increased for TiN films made with NMe3. At 320 °C, the step coverage was increased from 70% to nearly 100%. Within the range of deposition temperatures used in our study, 320 °C to 370 °C, the amount of improvement increased as the deposition temperature decreased. The trimethylamine did not increase the resistivity or the impurity levels in the films, but it did reduce the growth rate slightly. We suggest that the trimethylamine adsorbs onto the surface, temporarily blocking some of the sites on which growth could take place. Thus the effective sticking coefficients for the precursors are decreased, and the step coverage is increased.

SiC HTCVD Simulation Modified by Sublimation Etching

2006 ◽  
Vol 527-529 ◽  
pp. 107-110 ◽  
Author(s):  
Yasuo Kito ◽  
Emi Makino ◽  
Kei Ikeda ◽  
Masao Nagakubo ◽  
Shoichi Onda
Keyword(s):  
Gas Phase ◽  
Reaction Rates ◽  
Reaction Model ◽  
Inductive Heating ◽  
Present Calculation ◽  
Quasi Equilibrium ◽  
Phase Reaction ◽  
Vapor Pressures ◽  
Gas Phase Reaction ◽  
Sticking Coefficients

High temperature chemical vapor deposition (HTCVD) simulations of silicon carbide (SiC) were demonstrated with experimental results. A vertical cylindrical reactor was used in an RF inductive heating furnace and the temperature was more than 2200. SiH4 and C3H8 were used as source gases and H2 as carrier gas. A gas phase reaction model from the literature was used on the condition that the gas phase reaction is a quasi-equilibrium state. It was found that the major species were Si, Si2C, SiC2 and C2H2 in the gas phase reaction model as well as in the thermodynamic equilibrium calculation. Sublimation etching was considered in the surface reaction rates by modifying partial pressures of species with equilibrium vapor pressures. CFD-ACE+ and MALT2 software packages were used in the present calculation. The sticking coefficients were determined by fitting the calculated growth rates to the experimental ones. The simulated growth rate in a different reactor is in good agreement with the experimental value, using the same sticking coefficients. The present simulation could be useful to design a new reactor and to find optimum conditions.

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