Improved Conformality of CVD Titanium Nitride Films

1998 ◽  
Vol 555 ◽  
Author(s):  
Xinye Liu ◽  
Yuan Z. LU ◽  
Roy G. Gordon
Keyword(s):  
Titanium Nitride ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Nitrogen Gas ◽  
Silicon Dioxide Layer ◽  
Ammonia Gas ◽  
Tin Films ◽  
Step Coverage ◽  
Novel Approach ◽  
Sticking Coefficients

AbstractWe demonstrate a novel approach to improving the step coverage of thin films made by chemical vapor deposition (CVD). Titanium nitride (TiN) films were deposited by atmospheric pressure CVD using tetrakis(diethylamido)titanium vapor (TDEAT) and ammonia gas (NH3) carried in nitrogen gas. Trimethylamine (NMe3) gas was added during some of the depositions. The substrates were patterned silicon wafers having holes with aspect ratio of 3.5 through a silicon dioxide layer. We discovered that the step coverage was significantly increased for TiN films made with NMe3. At 320 °C, the step coverage was increased from 70% to nearly 100%. Within the range of deposition temperatures used in our study, 320 °C to 370 °C, the amount of improvement increased as the deposition temperature decreased. The trimethylamine did not increase the resistivity or the impurity levels in the films, but it did reduce the growth rate slightly. We suggest that the trimethylamine adsorbs onto the surface, temporarily blocking some of the sites on which growth could take place. Thus the effective sticking coefficients for the precursors are decreased, and the step coverage is increased.

Assessment of Carbon Contamination in Titanium Nitride Films Deposited from the Reaction of Titanium (IV) Ciiloride and Amines

1993 ◽  
Vol 327 ◽  
Author(s):  
Keith B. Williams ◽  
Ogie Stewart ◽  
Gene P. Reck ◽  
James W. Proscia
Keyword(s):  
Titanium Nitride ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Primary Amines ◽  
Scanning Electron Micrographs ◽  
X Ray Diffraction ◽  
Carbon Contamination ◽  
X Ray ◽  
Infrared Reflectivity ◽  
Pressure Chemical

AbstractThe reaction of titanium (IV) chloride and amines in an atmospheric pressure chemical vapor deposition (APCVD) has been previously shown to produce high quality titanium nitride films. These films were gold in appearance with high infrared reflectivity and resistivities as low as 80 microhm-cm. In the present study, the carbon content of the amines was systematically increased and the carbon levels in the films measured by XPS. For primary amines carbon contamination was not detected. Films deposited from secondary and tertiary amines had measurable carbon contamination. Correlation of carbon contamination with electrical resistivity and infrared reflectivity is discussed. Scanning electron micrographs and x-ray diffraction of the films are presented.

Atmospheric Pressure Chemical Vapor Deposition of Titanium Nitride from Titanium Bromide And Ammonia

1995 ◽  
Vol 410 ◽  
Author(s):  
Roy G. Gordon ◽  
Ross W. Frisbie ◽  
Joshua Musher ◽  
John Thornton
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Weight Percent ◽  
Liquid Solution ◽  
Injection System ◽  
Direct Liquid Injection ◽  
Titanium Tetrabromide

ABSTRACTTitanium nitride films were formed by chemical vapor deposition from titanium tetrabromide and ammonia at atmospheric pressure and substrate temperatures from about 400 to 600 °C. Although titanium tetrabromide is a highly hygroscopic solid at room temperature, it can be handled conveniently as a very concentrated liquid solution (85 weight percent) in bromine as a solvent. This solution can be vaporized by a direct liquid injection system. Alternatively, the solution can be pumped into a bubbler, from which the bromine solvent is then removed by fractional distillation. Rutherford Backscattering Spectroscopy was used to determine that the bromine content of TiN deposited at 500°C was about one atomic per cent. Growth rates were about 17 nm/min, and electrical resistivity was found to be about 200 μΩ-cm.

scholarly journals Chemical vapor deposition of titanium nitride thin films: kinetics and experiments

CrystEngComm ◽  
2019 ◽  
Vol 21 (26) ◽  
pp. 3974-3981 ◽  
Author(s):  
Juan Su ◽  
Raphaël Boichot ◽  
Elisabeth Blanquet ◽  
Frédéric Mercier ◽  
Michel Pons
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Chemical Vapor Deposition ◽  
Kinetic Model ◽  
Titanium Nitride ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tin Films ◽  
Simplified Kinetic Model

Titanium nitride (TiN) films were grown by chemical vapor deposition (CVD) from titanium chlorides, ammonia (NH3) and hydrogen (H2) on single crystal c-plane sapphire, WC–Co, stainless steel and amorphous graphite substrates. The preferred orientation and color of TiN layer are studied by combining a simplified kinetic model with experiments.

Step Coverage Analysis for Hexamethyldisiloxane and Ozone Atmospheric Pressure Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 2, No. 3B) ◽  
pp. L473-L475 ◽  
Author(s):  
Katsuhiro Fujino ◽  
Yasuyuki Egashira ◽  
Yukihiro Shimogaki ◽  
Hiroshi Komiyama
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Step Coverage ◽  
Coverage Analysis ◽  
Pressure Chemical

Atmospheric pressure chemical vapor deposition of titanium nitride on metals

2006 ◽  
Vol 200 (8) ◽  
pp. 2821-2826 ◽  
Author(s):  
Jun C. Nable ◽  
Shaneela Nosheen ◽  
Steven L. Suib ◽  
Francis S. Galasso
Keyword(s):  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Pressure Chemical
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