Postdeposition annealing effect on the reliability of atomic-layer-deposited Al2O3 films on GaN

2020 ◽  
Vol 38 (6) ◽  
pp. 062207
Author(s):  
Kiyotaka Horikawa ◽  
Satoshi Okubo ◽  
Hiroshi Kawarada ◽  
Atsushi Hiraiwa
Keyword(s):  
Atomic Layer ◽  
Annealing Effect ◽  
Al2o3 Films

Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy

2004 ◽  
Vol 269 (2-4) ◽  
pp. 181-186 ◽  
Author(s):  
G.X. Shi ◽  
P. Jin ◽  
B. Xu ◽  
C.M. Li ◽  
C.X. Cui ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Annealing Effect

Substrate dependence on the optical properties of Al2O3 films grown by atomic layer deposition

1997 ◽  
Vol 71 (25) ◽  
pp. 3604-3606 ◽  
Author(s):  
Y. Kim ◽  
S. M. Lee ◽  
C. S. Park ◽  
S. I. Lee ◽  
M. Y. Lee
Keyword(s):  
Optical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Substrate Dependence ◽  
Al2o3 Films

scholarly journals Application of ALD-Al2O3 in CdS/CdTe Thin-Film Solar Cells

Energies ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 1123 ◽  
Author(s):  
Guanggen Zeng ◽  
Xia Hao ◽  
Shengqiang Ren ◽  
Lianghuan Feng ◽  
Qionghua Wang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer ◽  
Transparent Conductive Oxide ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Cdte Thin Film ◽  
Cell Conversion ◽  
Al2o3 Films

The application of thinner cadmium sulfide (CdS) window layer is a feasible approach to improve the performance of cadmium telluride (CdTe) thin film solar cells. However, the reduction of compactness and continuity of thinner CdS always deteriorates the device performance. In this work, transparent Al2O3 films with different thicknesses, deposited by using atomic layer deposition (ALD), were utilized as buffer layers between the front electrode transparent conductive oxide (TCO) and CdS layers to solve this problem, and then, thin-film solar cells with a structure of TCO/Al2O3/CdS/CdTe/BC/Ni were fabricated. The characteristics of the ALD-Al2O3 films were studied by UV–visible transmittance spectrum, Raman spectroscopy, and atomic force microscopy (AFM). The light and dark J–V performances of solar cells were also measured by specific instrumentations. The transmittance measurement conducted on the TCO/Al2O3 films verified that the transmittance of TCO/Al2O3 were comparable to that of single TCO layer, meaning that no extra absorption loss occurred when Al2O3 buffer layers were introduced into cells. Furthermore, due to the advantages of the ALD method, the ALD-Al2O3 buffer layers formed an extremely continuous and uniform coverage on the substrates to effectively fill and block the tiny leakage channels in CdS/CdTe polycrystalline films and improve the characteristics of the interface between TCO and CdS. However, as the thickness of alumina increased, the negative effects of cells were gradually exposed, especially the increase of the series resistance (Rs) and the more serious “roll-over” phenomenon. Finally, the cell conversion efficiency (η) of more than 13.0% accompanied by optimized uniformity performances was successfully achieved corresponding to the 10 nm thick ALD-Al2O3 thin film.

Atomic layer deposited Al2O3 films for anti-reflectance and surface passivation applications

2014 ◽  
Vol 288 ◽  
pp. 430-434 ◽  
Author(s):  
Li Qiang Zhu ◽  
Yang Hui Liu ◽  
Hong Liang Zhang ◽  
Hui Xiao ◽  
Li Qiang Guo
Keyword(s):  
Surface Passivation ◽  
Atomic Layer ◽  
Al2o3 Films

scholarly journals Electron transport mechanism through ultrathin Al2O3 films grown at low temperatures using atomic–layer deposition

2019 ◽  
Vol 34 (10) ◽  
pp. 105004
Author(s):  
Pengfei Ma ◽  
Wenhao Guo ◽  
Jiamin Sun ◽  
Jiacheng Gao ◽  
Guanqun Zhang ◽  
...  
Keyword(s):  
Electron Transport ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Transport Mechanism ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Al2o3 Films
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