Nonlinear effects in low-energy ion sputtering of solids

2020 ◽  
Vol 38 (5) ◽  
pp. 053203 ◽  
Author(s):  
Yuriy Kudriavtsev ◽  
Rene Asomoza ◽  
Angelica Hernandez ◽  
Dmitry Yu. Kazantsev ◽  
Boris Ya. Ber ◽  
...  
Keyword(s):  
Nonlinear Effects ◽  
Low Energy ◽  
Ion Sputtering

scholarly journals Characterization of nitrogen species incorporated into graphite using low energy nitrogen ion sputtering

2016 ◽  
Vol 18 (1) ◽  
pp. 458-465 ◽  
Author(s):  
Hisao Kiuchi ◽  
Takahiro Kondo ◽  
Masataka Sakurai ◽  
Donghui Guo ◽  
Junji Nakamura ◽  
...  
Keyword(s):  
Low Energy ◽  
Nitrogen Species ◽  
Ion Sputtering ◽  
Zigzag Edge ◽  
Nitrogen Doped ◽  
Doping Mechanism ◽  
Nitrogen Ions ◽  
Nitrogen Ion

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.

AFM ANALYSIS OF QUANTUM DOT STRUCTURES INDUCED BY ION SPUTTERING WITH DIFFERENT TIPS

2003 ◽  
Vol 10 (06) ◽  
pp. 837-841
Author(s):  
M. XU ◽  
C. TEICHERT
Keyword(s):  
Quantum Dot ◽  
High Hardness ◽  
Complete Information ◽  
Low Energy ◽  
Order Structure ◽  
Ion Sputtering ◽  
Soft Or ◽  
Surface Information ◽  
Complete Surface ◽  
Afm Analysis

With tips of different hardness, we analyzed the effect of the hardness and shape of the actual AFM tip on the measurement of the best GaSb quantum dot (QD) structures induced by low energy Ar + sputtering. The comparison indicated that the complete information on the detailed dot shape and order structure can be determined with the hard and good tip, while with the soft or worn tip some information on the dot height and shape cannot be obtained. Our results suggest that, in order to obtain the complete surface information, the high hardness and good AFM tip should be used for semiconductor QD structures.

Ordering of Ga Nanodroplets by Low-Energy Ion Sputtering

2013 ◽  
pp. 99-114 ◽  
Author(s):  
Sabina Koukourinkova ◽  
Zhiming M. Wang ◽  
Jiang Wu ◽  
Xingliang Xu ◽  
Mourad Benamara ◽  
...  
Keyword(s):  
Low Energy ◽  
Ion Sputtering

Layer-by-Layer Sputtering and Ultrathin Ion Implantation by Low-Energy Grazing Ion Bombardment

2005 ◽  
Vol 908 ◽  
Author(s):  
Abdurauf Dzhurakhalov ◽  
Sirojiddin Rahmatov ◽  
Nigorakhon Teshabaeva ◽  
Maqsud Yusupov
Keyword(s):  
Ion Implantation ◽  
Crystal Orientation ◽  
Ion Bombardment ◽  
Grazing Incidence ◽  
Low Energy ◽  
Layer By Layer ◽  
Ion Sputtering ◽  
Depth Distributions

AbstractThe ion sputtering and implantation into GaAs(001) surface at 1-5 keV Se+ grazing ion bombardment have been investigated by computer simulation.The azimuth angular dependencies of sputtering and penetration yield at grazing incidence have been calculated. It was observed that these dependencies correlate the crystal orientation. The depth distributions of 1-5 keV Se ions implanted into GaAs(001) for several azimuth angles of incidence have been presented.

scholarly journals Studies of Self-Organized Nanostructures on InP(111) Surfaces After Low Energy Ar+ Ion Irradiation

2008 ◽  
Vol 8 (8) ◽  
pp. 4227-4230
Author(s):  
D. Paramanik ◽  
S. Majumdar ◽  
S. R. Sahoo ◽  
S. N. Sahu ◽  
S. Varma
Keyword(s):  
Surface Roughness ◽  
Scanning Probe Microscopy ◽  
Ion Irradiation ◽  
Low Energy ◽  
Scanning Probe ◽  
Ion Sputtering ◽  
Phonon Confinement ◽  
Phonon Softening ◽  
Self Organized ◽  
Crossover Behavior

We report formation of self organized InP nano dots using 3 keV Ar+ ion sputtering, at 15° incidence from surface normal, on InP(111) surface. Morphology and optical properties of the sputtered surface, as a function of sputtering time, have been investigated by Scanning Probe Microscopy and Raman Scattering techniques. Uniform patterns of nano dots are observed for different durations of sputtering. The sizes and the heights of these nano dots vary between 10 to 100 nm and 20 to 40 nm, respectively. With increasing of sputtering time, t, the size and height of these nano dots increases up to a certain sputtering time tc. However beyond tc, the dots break down into smaller nanostructures, and as a result, the size and height of these nanostructures decrease. The uniformity and regularity of these structures are also lost for sputtering beyond tc. The crossover behavior is also observed in the rms surface roughness. Raman investigations of InP nano dots reveal optical phonon softening due to phonon confinement in the surface nano dots.

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