scholarly journals Manipulation of thin silver film growth on weakly interacting silicon dioxide substrates using oxygen as a surfactant

2020 ◽  
Vol 38 (4) ◽  
pp. 043406 ◽  
Author(s):  
Nikolaos Pliatsikas ◽  
Andreas Jamnig ◽  
Martin Konpan ◽  
Andreas Delimitis ◽  
Gregory Abadias ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silver Film ◽  
Film Growth ◽  
Thin Silver Film ◽  
Weakly Interacting

scholarly journals Scaling of elongation transition thickness during thin-film growth on weakly interacting substrates

2017 ◽  
Vol 111 (8) ◽  
pp. 084101 ◽  
Author(s):  
B. Lü ◽  
L. Souqui ◽  
V. Elofsson ◽  
K. Sarakinos
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Weakly Interacting

scholarly journals Advanced Lithography for Nanofabrication

1996 ◽  
Vol 448 ◽  
Author(s):  
Frank Y.C. Hui ◽  
Gyula Eres
Keyword(s):  
Silicon Dioxide ◽  
Film Growth ◽  
Hydrogen Desorption ◽  
Surface Mobility ◽  
Selective Area ◽  
Clean Environment ◽  
Phase Precursor ◽  
Novel Method ◽  
Wet Chemical ◽  
Pattern Resolution

AbstractA novel method for generating lateral features by patterning the naturally forming surface hydride layer on Si is described. Because of the relatively strong chemical bonding between silicon and hydrogen, the hydride layer acts as a robust passivation layer with essentially zero surface mobility at ordinary temperatures. A focused electron beam from a scanning electron microscope was used for patterning. Upon losing the hydrogen passivation the silicon surface sites become highly reactive. Ideally, the lifetime of such a pattern in a clean environment should be infinite. Deliberate exposure of the entire wafer to a suitable gas phase precursor results in selective area film growth on the depassivated pattern. Linewidths and feature sizes of silicon dioxide on silicon below 100 nm were achieved upon exposure to air. The silicon dioxide is robust and allows effective pattern transfer by anisotropic wet-chemical etching. In this paper, the mechanism of hydrogen desorption and subsequent pattern formation, and the factors that govern the ultimate pattern resolution will be discussed.

Properties of SiO2 Films Fabricated by Microwave Ecr Plasma Processing with and Without Energetic Particle Bombardment During Film Deposition Part I. Fabrication Processes and Physical Properties

1991 ◽  
Vol 223 ◽  
Author(s):  
T. T. Chau ◽  
S. R. Mejia ◽  
K. C. Kao
Keyword(s):  
Silicon Dioxide ◽  
Particle Bombardment ◽  
Energetic Particle ◽  
Deposition Temperature ◽  
Film Growth ◽  
Plasma Processing ◽  
Film Deposition ◽  
Ecr Plasma ◽  
Group A ◽  
Group B

ABSTRACTSilicon dioxide (SiO2) films were fabricated by microwave ECR plasma processing. Two groups of films were fabricated; group A with the substrates placed in a position directly facing the plasma so that the substrates as well as the on-growing films were subjected to bombardment of energetic particles produced in the plasma, and group B with the substrates placed in a processing chamber physically separated from the plasma chamber in order to prevent or suppress the damaging effects resulting from these energetic particle bombardment. The systems used for fabricating these two different groups of samples are described. The films were deposited at various deposition temperatures. On the basis of the deposition rate as a function of deposition temperature the film growth for group A samples is due mainly to mass-limited reaction, and that for group B samples is due to surface rate limited reaction. The stoichiometric level for group A does not change with deposition temperature though the films density increases with increasing deposition temperature. However, group B samples exhibit an off-stoichiometric property but they become highly stoichiometric as the deposition temperature is increased beyond 200 °C

High performance flexible organic photomultiplication photodetector based on an ultra-thin silver film transparent electrode

2020 ◽  
Vol 31 (31) ◽  
pp. 314001 ◽  
Author(s):  
Linlin Shi ◽  
Jingcheng Song ◽  
Ye Zhang ◽  
Guohui Li ◽  
Wenyan Wang ◽  
...  
Keyword(s):  
High Performance ◽  
Silver Film ◽  
Transparent Electrode ◽  
Thin Silver Film

Coupled surface plasmons excited by photons in a free-standing thin silver film

1985 ◽  
Vol 31 (4) ◽  
pp. 2548-2550 ◽  
Author(s):  
T. Inagaki ◽  
M. Motosuga ◽  
E. T. Arakawa ◽  
J. P. Goudonnet
Keyword(s):  
Surface Plasmons ◽  
Silver Film ◽  
Free Standing ◽  
Thin Silver Film

Morphology of thin silver film grown by dc sputtering on Si(001)

1998 ◽  
Vol 31 (23) ◽  
pp. L73-L77 ◽  
Author(s):  
S Kundu ◽  
S Hazra ◽  
S Banerjee ◽  
M K Sanyal ◽  
S K Mandal ◽  
...  
Keyword(s):  
Silver Film ◽  
Thin Silver Film ◽  
Dc Sputtering
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