Implementation of the inductively coupled plasma etching processes for forming gallium nitride nanorods used in ultraviolet light-emitting diode technology

Author(s):  
Marek Ekielski ◽  
Marek Wzorek ◽  
Krystyna Gołaszewska ◽  
Alina Domanowska ◽  
Andrzej Taube ◽  
...  
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Byung-Jae Kim ◽  
Michael A. Mastro ◽  
Hyunjung Jung ◽  
Hong-Yeol Kim ◽  
Sung Hyun Kim ◽  
...  

RSC Advances ◽  
2014 ◽  
Vol 4 (93) ◽  
pp. 51215-51219 ◽  
Author(s):  
Ki Chang Kwon ◽  
Buem Jun Kim ◽  
Cheolmin Kim ◽  
Jong-Lam Lee ◽  
Soo Young Kim

The metal chloride doped graphene (D-G) enhanced the electrical properties of the light emitting diodes (LEDs). Therefore, avoiding the inductively coupled plasma etching step is better for D-G electrodes in GaN-based LEDs.


2012 ◽  
Author(s):  
Jean Nguyen ◽  
John Gill ◽  
Sir B. Rafol ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
...  

2005 ◽  
Vol 34 (6) ◽  
pp. 740-745 ◽  
Author(s):  
E. Laffosse ◽  
J. Baylet ◽  
J. P. Chamonal ◽  
G. Destefanis ◽  
G. Cartry ◽  
...  

2009 ◽  
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pp. 3859-3861 ◽  
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Byung-Jae Kim ◽  
Hyunjung Jung ◽  
Hong-Yeol Kim ◽  
Joona Bang ◽  
Jihyun Kim

2015 ◽  
Vol 32 (5) ◽  
pp. 058102 ◽  
Author(s):  
Ying Cheng ◽  
Ji-Jun Zou ◽  
Ming Wan ◽  
Wei-Lu Wang ◽  
Xin-Cun Peng ◽  
...  

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