scholarly journals Correlation between SiO2 growth rate and difference in electronegativity of metal–oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor

2020 ◽  
Vol 38 (3) ◽  
pp. 032409
Author(s):  
Erika Maeda ◽  
Toshihide Nabatame ◽  
Masafumi Hirose ◽  
Mari Inoue ◽  
Akihiko Ohi ◽  
...  
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Silane Precursor

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

2010 ◽  
Vol 107 (10) ◽  
pp. 106104 ◽  
Author(s):  
D. Gregušová ◽  
R. Stoklas ◽  
Ch. Mizue ◽  
Y. Hori ◽  
J. Novák ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trap States ◽  
Semiconductor Structures ◽  
Layer Deposition

High Growth Rate SiO2 by Atomic Layer Deposition

2019 ◽  
Vol 13 (1) ◽  
pp. 453-457 ◽  
Author(s):  
Raija Matero ◽  
Suvi Haukka ◽  
Marko Tuominen
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
High Growth ◽  
Atomic Layer ◽  
High Growth Rate ◽  
Layer Deposition
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