Two dimensional dopant and carrier profiles obtained by scanning capacitance microscopy on an actively biased cross-sectioned metal–oxide–semiconductor field-effect transistor

V. V. Zavyalov; J. S. McMurray; S. D. Stirling; C. C. Williams; H. Smith

doi:10.1116/1.591230

Two dimensional dopant and carrier profiles obtained by scanning capacitance microscopy on an actively biased cross-sectioned metal–oxide–semiconductor field-effect transistor

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591230 ◽

2000 ◽

Vol 18 (1) ◽

pp. 549 ◽

Cited By ~ 30

Author(s):

V. V. Zavyalov ◽

J. S. McMurray ◽

S. D. Stirling ◽

C. C. Williams ◽

H. Smith

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

Effect Transistor

Download Full-text

Two-dimensional carrier profiling on operating Si metal-oxide semiconductor field-effect transistor by scanning capacitance microscopy

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2198859 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1371 ◽

Cited By ~ 12

Author(s):

Kenjiro Kimura ◽

Kei Kobayashi ◽

Hirofumi Yamada ◽

Kazumi Matsushige ◽

Koji Usuda

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Scanning Capacitance Microscopy ◽

Effect Transistor

Download Full-text

Comparison of two-dimensional carrier profiles in metal–oxide– semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591228 ◽

2000 ◽

Vol 18 (1) ◽

pp. 540 ◽

Cited By ~ 20

Author(s):

P. De Wolf ◽

W. Vandervorst ◽

H. Smith ◽

N. Khalil

Keyword(s):

Metal Oxide ◽

Inverse Modeling ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Spreading Resistance ◽

Effect Transistor

Download Full-text

P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

Scientific Reports ◽

10.1038/srep23683 ◽

2016 ◽

Vol 6 (1) ◽

Cited By ~ 18

Author(s):

Kexiong Zhang ◽

Masatomo Sumiya ◽

Meiyong Liao ◽

Yasuo Koide ◽

Liwen Sang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Effect Transistor ◽

Gan Heterostructure

Download Full-text

Simulation of Two-Dimensional 50 nm Vertical Metal Oxide Semiconductor Field-Effect Transistor Incorporating a Dielectric Pocket

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.111201 ◽

2009 ◽

Vol 48 (11) ◽

pp. 111201 ◽

Cited By ~ 6

Author(s):

Ooi Poh Kok ◽

Kamarulazizi Ibrahim

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Effect Transistor

Download Full-text

Characterization and Analysis of Two-dimensional Hydrogenated Nanocrystalline-diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) using Different Surface Charge Models with Device Simulation

2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO) ◽

10.1109/nano47656.2020.9183658 ◽

2020 ◽

Author(s):

A. Reem ◽

A. Mohammed ◽

Quang N. Nguyen ◽

H. Kawarada

Keyword(s):

Metal Oxide ◽

Surface Charge ◽

Field Effect ◽

Field Effect Transistor ◽

Device Simulation ◽

Metal Oxide Semiconductor ◽

Nanocrystalline Diamond ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Effect Transistor

Download Full-text

Study on channel depletion in metal-oxide-semiconductor field effect transistor using top-view imaging through scanning capacitance microscopy

Surface and Interface Analysis ◽

10.1002/sia.2971 ◽

2008 ◽

Vol 41 (1) ◽

pp. 34-37 ◽

Cited By ~ 1

Author(s):

Y. Naitou ◽

H. Ogiso ◽

S. Kamohara ◽

F. Yano ◽

A. Nishida

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scanning Capacitance Microscopy ◽

Effect Transistor ◽

Top View

Download Full-text

Two-dimensional dopant profiling of submicron metal–oxide–semiconductor field-effect transistor using nonlinear least squares inverse modeling

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589033 ◽

1996 ◽

Vol 14 (1) ◽

pp. 224 ◽

Cited By ~ 7

Author(s):

N. Khalil

Keyword(s):

Metal Oxide ◽

Inverse Modeling ◽

Field Effect ◽

Field Effect Transistor ◽

Nonlinear Least Squares ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Dopant Profiling ◽

Effect Transistor

Download Full-text

Extraction of two-dimensional metal–oxide–semiconductor field effect transistor structural information from electrical characteristics

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591227 ◽

2000 ◽

Vol 18 (1) ◽

pp. 533 ◽

Cited By ~ 2

Author(s):

W. R. Richards ◽

M. Shen

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Structural Information ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Electrical Characteristics ◽

Effect Transistor

Download Full-text

Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106046 ◽

2021 ◽

Vol 134 ◽

pp. 106046

Author(s):

Shujun Ye ◽

Kikuo Yamabe ◽

Tetsuo Endoh

Keyword(s):

Integrated Circuits ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

Download Full-text

A technique to measure spin-dependent trapping events at the metal–oxide–semiconductor field-effect transistor interface: Near zero field spin-dependent charge pumping

Journal of Applied Physics ◽

10.1063/5.0027214 ◽

2020 ◽

Vol 128 (24) ◽

pp. 244501

Author(s):

M. A. Anders ◽

P. M. Lenahan ◽

N. J. Harmon ◽

M. E. Flatté

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Zero Field ◽

Charge Pumping ◽

Effect Transistor

Download Full-text