scholarly journals P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Kexiong Zhang ◽  
Masatomo Sumiya ◽  
Meiyong Liao ◽  
Yasuo Koide ◽  
Liwen Sang
2010 ◽  
Vol 49 (4) ◽  
pp. 04DF09 ◽  
Author(s):  
Jin-Ping Ao ◽  
Katsutoshi Nakatani ◽  
Keisuke Ohmuro ◽  
Masahiro Sugimoto ◽  
Cheng-Yu Hu ◽  
...  

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