Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument
2000 ◽
Vol 18
(1)
◽
pp. 519
◽
2006 ◽
Vol 24
(2)
◽
pp. 362-368
◽
2015 ◽
2000 ◽
Vol 18
(1)
◽
pp. 509
◽
2003 ◽
Vol 207
(3)
◽
pp. 339-344
2017 ◽
Vol 49
(11)
◽
pp. 1057-1063
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1999 ◽
Vol 144-145
◽
pp. 292-296
◽
1992 ◽
Vol 18
(2)
◽
pp. 147-152
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