Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy

Author(s):  
P. De Wolf ◽  
R. Stephenson ◽  
T. Trenkler ◽  
T. Clarysse ◽  
T. Hantschel ◽  
...  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.


2009 ◽  
Author(s):  
Peter Moeck ◽  
Marius Toader ◽  
Mahmoud Abdel-Hafiez ◽  
Michael Hietschold ◽  
Erik M. Secula ◽  
...  

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