scholarly journals High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition

AIP Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 065301
Author(s):  
Shuo Zhang ◽  
Ping Ma ◽  
Boting Liu ◽  
Dongxue Wu ◽  
Yuliang Huang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Periodic Growth ◽  
Metalorganic Chemical

In Situ Heteroepitaxial Bi2Sr2CaCu2O8 Thin Films Prepared by Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 335 ◽  
Author(s):  
Frank Dimeo ◽  
Bruce W. Wessels ◽  
Deborah A. Neumayer ◽  
Tobin J. Marks ◽  
Jon L. Schindler ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Phase ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Metalorganic Chemical

AbstractBi2Sr2CaCu2O8 thin films have been prepared in situ by low pressure metalorganic chemical vapor deposition using fluorinated β–diketonate precursors. The influence of the growth conditions on the oxide phase stability and impurity phase formation was examined as well as the superconducting properties of the films. Thin films deposited on LaAIO3 substrates were epitaxial as confirmed by x-ray diffraction measurements, including θ-2θ and φ scans. Four probe resistivity measurements showed the films to be superconducting with a maximum Tc0 of 90 K without post annealing. This Tc0 is among the highest reported for thin films of the BSCCO (2212) phase, and approaches reported bulk values.

Effects of the Selenium Precursor on the Growth of ZnSe by Metalorganic Chemical Vapor Deposition

1988 ◽  
Vol 131 ◽  
Author(s):  
Konstantinos P. Giapis ◽  
Lu Da-Cheng ◽  
Klavs F. Jensen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
High Mobility ◽  
Chemical Vapor ◽  
Gaas Substrates ◽  
Downflow Reactor ◽  
Very High ◽  
Metalorganic Chemical

ABSTRACTThe growth of ZnSe on GaAs substrates by metalorganic chemical vapor deposition was investigated in a specially designed vertical downflow reactor. Dimethylzinc was used as the Zn source while different Se source compounds (hydrogen selenide (H2Se), diethylselenide and methylallylselenide) were employed to determine the effect of different source combinations on morphology, thickness uniformity, growth rate, electrical properties and photoluminescence (PL) characteristics of the grown ZnSe films. The H2Se was produced in situ by reaction of H2 and Se followed by distillation to control the amount of H2Se entering the reaction zone. H2Se produced very high mobility films with good PL spectra but poor surface morphology. Diethylselenide led to layers of good morphology and PL characteristics but the films were highly resistive. Unusual surface features were observed for methylallylselenide.

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