Correlation of atomic force microscopy sidewall roughness measurements with scanning electron microscopy line-edge roughness measurements on chemically amplified resists exposed by x-ray lithography

1999 ◽  
Vol 17 (6) ◽  
pp. 2723 ◽  
Author(s):  
Geoffrey W. Reynolds ◽  
James W. Taylor
Keyword(s):  
Line Edge Roughness ◽  
Sidewall Roughness ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Chemically Amplified ◽  
Edge Roughness ◽  
Chemically Amplified Resists ◽  
Roughness Measurements ◽  
Scanning Electron

scholarly journals Characterization of the shape and line-edge roughness of polymer gratings with grazing incidence small-angle X-ray scattering and atomic force microscopy

2016 ◽  
Vol 49 (3) ◽  
pp. 823-834 ◽  
Author(s):  
Hyo Seon Suh ◽  
Xuanxuan Chen ◽  
Paulina A. Rincon-Delgadillo ◽  
Zhang Jiang ◽  
Joseph Strzalka ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Grazing Incidence ◽  
Line Edge Roughness ◽  
X Ray ◽  
Force Microscopy ◽  
X Ray Scattering ◽  
Atomic Force ◽  
Edge Roughness ◽  
Average Shape ◽  
Polymer Gratings

Grazing-incidence small-angle X-ray scattering (GISAXS) is increasingly used for the metrology of substrate-supported nanoscale features and nanostructured films. In the case of line gratings, where long objects are arranged with a nanoscale periodicity perpendicular to the beam, a series of characteristic spots of high-intensity (grating truncation rods, GTRs) are recorded on a two-dimensional detector. The intensity of the GTRs is modulated by the three-dimensional shape and arrangement of the lines. Previous studies aimed to extract an average cross-sectional profile of the gratings, attributing intensity loss at GTRs to sample imperfections. Such imperfections are just as important as the average shape when employing soft polymer gratings which display significant line-edge roughness. Herein are reported a series of GISAXS measurements of polymer line gratings over a range of incident angles. Both an average shape and fluctuations contributing to the intensity in between the GTRs are extracted. The results are critically compared with atomic force microscopy (AFM) measurements, and it is found that the two methods are in good agreement if appropriate corrections for scattering from the substrate (GISAXS) and contributions from the probe shape (AFM) are accounted for.

Lateral Size of Self-Patterned Nanostructures Controlled by Multi-Step Deposition

2005 ◽  
Vol 106 ◽  
pp. 117-122 ◽  
Author(s):  
Izabela Szafraniak ◽  
Dietrich Hesse ◽  
Marin Alexe
Keyword(s):  
Electron Microscopy ◽  
Ultrathin Films ◽  
Lateral Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Non Volatile Memory ◽  
Ferroelectric Capacitors ◽  
Scanning Electron

Self-patterning presents an appealing alternative to lithography for the production of arrays of nanoscale ferroelectric capacitors for use in high density non-volatile memory devices. Recently a self-patterning method, based on the use of the instability of ultrathin films during hightemperature treatments, was used to fabricate nanosized ferroelectrics. This paper reports the use of the method for the preparation of PZT nanoislands on different single crystalline substrates - SrTiO3, MgO and LaAlO3. Moreover, a multi-step deposition procedure in order to control lateral the dimension of the crystals was introduced. The nanostructures obtained were studied by atomic force microscopy, scanning electron microscopy and X-ray diffraction.

Wettability and Nanotribological Response of Silicon Surfaces Functionalized by Ion Implantation

2012 ◽  
Vol 730-732 ◽  
pp. 257-262
Author(s):  
Bruno Nunes ◽  
Sergio Magalhães ◽  
Nuno Franco ◽  
Eduardo Alves ◽  
Ana Paula Serro ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Silicon Surfaces ◽  
Iron Ions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scanning Electron

Aiming to improve the nanotribological response of Si-based materials we implanted silicon wafers with different fluences of iron ions (up to 2x1017 cm-2). Implantation was followed by annealing treatments at temperatures from 550°C to 1000°C. The implanted surfaces were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and wettability tests. Then, samples were submitted to AFM-based nanowear tests. We observe an increase of both hidrophobicity and and wear resistance of the implanted silicon, indicating that ion implantation of Si can be a route to be deeper explored in what concerns tribomechanical improvement of Si.

Characterization of Multiple Functional Solid Line of Graphite Ink Surface Printed by Micro-Flexographic

2015 ◽  
Vol 752-753 ◽  
pp. 1379-1383
Author(s):  
M.I. Maksud ◽  
Mohd Sallehuddin Yusof ◽  
Zaidi Embong
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Printing Plate ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Flexographic Printing ◽  
Scanning Electron

The purpose of this paper is to study a ink surface morphology, quantify the chemical composition involved in processing of graphite ink printed by flexographic printing. The methodology is to use surface sensitive technique, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). As a finding we successfully achieved 25 micron lines array using PDMS printing plate. The Originality and value of this work is surface sensitive techniques like XPS, AFM and FESEM were exclusively used in order to characterize graphite inks printed by flexographic method, using PDMS printing plate.

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