Reduction of long range fogging effect in a high acceleration voltage electron beam mask writing system

1999 ◽  
Vol 17 (6) ◽  
pp. 2936 ◽  
Author(s):  
Munehiro Ogasawara ◽  
Naoharu Shimomura ◽  
Jun Takamatsu ◽  
Shusuke Yoshitake ◽  
Kenji Ooki ◽  
...  
Keyword(s):  
Electron Beam ◽  
Long Range ◽  
Writing System ◽  
Voltage Electron ◽  
High Acceleration ◽  
Fogging Effect ◽  
Acceleration Voltage

An Evaluation of High Acceleration Voltage Electron Beam Writing on X-Ray Masks

1998 ◽  
Vol 37 (Part 1, No. 5A) ◽  
pp. 2445-2450
Author(s):  
Koji Kise ◽  
Sunao Aya ◽  
Hideki Yabe ◽  
Kaeko Kitamura ◽  
Kenji Marumoto
Keyword(s):  
Electron Beam ◽  
X Ray ◽  
Voltage Electron ◽  
High Acceleration ◽  
Acceleration Voltage

3D nanofabrication using controlled-acceleration-voltage electron beam lithography with nanoimprinting technology

2019 ◽  
Vol 8 (3-4) ◽  
pp. 253-266
Author(s):  
Noriyuki Unno ◽  
Jun Taniguchi
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Low Cost ◽  
Three Dimensional ◽  
Surface Areas ◽  
Voltage Electron ◽  
3D Nanostructures ◽  
Wide Range ◽  
Lift Off ◽  
Acceleration Voltage

Abstract Nanostructures have unique characteristics, such as large specific surface areas, that provide a wide range of engineering applications, such as electronics, optics, biotics, and thermal and fluid dynamics. They can be used to downsize many engineering products; therefore, new nanofabrication techniques are strongly needed to meet this demand. A simple fabrication process with high throughput is necessary for low-cost nanostructures. In recent years, three-dimensional (3D) nanostructures have attracted much attention because they dramatically opened up new fields for applications. However, conventional techniques for fabricating 3D nanostructures contain many complex processes, such as multiple patterning lithography, metal deposition, lift-off, etching, and chemical-mechanical polishing. This paper focuses on controlled-acceleration-voltage electron beam lithography (CAV-EBL), which can fabricate 3D nanostructures in one shot. The applications of 3D nanostructures are introduced, and the conventional 3D patterning technique is compared with CAV-EBL and various 3D patterning techniques using CAV-EBL with nanoimprinting technology. Finally, the outlook for next-generation devices that can be fabricated by CAV-EBL is presented.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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