298 K operation of Nb/Nb oxide-based single-electron transistors with reduced size of tunnel junctions by thermal oxidation

1998 ◽  
Vol 83 (10) ◽  
pp. 5567-5569 ◽  
Author(s):  
Jun-ichi Shirakashi ◽  
Kazuhiko Matsumoto ◽  
Naruhisa Miura ◽  
Makoto Konagai
Keyword(s):  
Thermal Oxidation ◽  
Tunnel Junctions ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

Single electron transistors with hydrogen treatment of ALD SiO2in nanoscale metal–insulator–metal tunnel junctions

2017 ◽  
Vol 28 (21) ◽  
pp. 215203 ◽  
Author(s):  
Golnaz Karbasian ◽  
Michael S McConnell ◽  
Alexei O Orlov ◽  
Alexei N Nazarov ◽  
Gregory L Snider
Keyword(s):  
Tunnel Junctions ◽  
Single Electron ◽  
Hydrogen Treatment ◽  
Single Electron Transistors ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Electron Transistors

scholarly journals First Principles Calculations of Carbon-Nanotube and Boron-Nanotube Based Single Electron Transistors

2020 ◽  
Keyword(s):  
Carbon Nanotube ◽  
Molecular Electronics ◽  
Density Functional ◽  
Tunnel Junctions ◽  
Dielectric Material ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Single Electron Transistors ◽  
Electron Transistors ◽  
Boron Nanotube

Low power consumption, small device size and better controlled onto the charge carriers are the factors, that made Single-electron transistor (SET) a suitable candidate for molecular electronics; yet there are some improvements that can be done in order to use it practically. The single electron transistor (SET) operates through the tunnelling of electron via two tunnel junctions. Choosing a suitable island material plays a key role in the tunnelling of electron through the tunnel junctions. In the present work, the First principle calculations of carbon-nanotube and boron-nanotube based Single-Electron Transistors have been performed. The three types of configurations of nanotubes i.e. zigzag (5,0), armchair (3,3) and chiral (4,2), of the smallest possible diameter (approximately 4A ),have been used. The calculations have been carried out using Atomistic toolkit (ATK-VNL) simulation package which is a density functional theory (DFT) based package. In the present work, local density approximations (LDA) as well as generalized gradient approximation(GGA) have been used to demonstrate the properties of nanotubes-based SET. These approaches have been implemented for a nanotube that is lying just above the gate dielectric. On the either side of the dielectric the electrodes are present, source in the left and drain in the right. The metallic electrodes made of gold (W=5.28eV) and the dielectric material of the dielectric constant have been used. The charging energies and additional energies of both types of nanotubes-based SET in the isolated as well as in the electrostatic environment have been calculated using the approximations. The calculated values of the charging energies in the electrostatic environment have been found to be less than the charging energies in isolated configuration that shows the renormalization of molecular energy levels. Variations of total energies against gate voltages and Charge stability diagrams (CSD) have been discussed.

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