Simulation of room temperature thermionic emission from Al[sub x]Ga[sub 1−x]N negative electron affinity cathodes

1999 ◽  
Vol 17 (2) ◽  
pp. 552 ◽  
Author(s):  
C. W. Hatfield ◽  
G. L. Bilbro
Keyword(s):  
Electron Affinity ◽  
Room Temperature ◽  
Thermionic Emission ◽  
Negative Electron Affinity

scholarly journals A model for emission yield from planar photocathodes based on photon-enhanced thermionic emission or negative-electron-affinity photoemission

2012 ◽  
Vol 112 (9) ◽  
pp. 094907 ◽  
Author(s):  
Kunal Sahasrabuddhe ◽  
Jared W. Schwede ◽  
Igor Bargatin ◽  
Joel Jean ◽  
Roger T. Howe ◽  
...  
Keyword(s):  
Electron Affinity ◽  
Thermionic Emission ◽  
Negative Electron Affinity ◽  
Emission Yield

Electron Emission from a Diamond (111) p–i–n+Junction Diode with Negative Electron Affinity during Room Temperature Operation

2010 ◽  
Vol 3 (4) ◽  
pp. 041301 ◽  
Author(s):  
Daisuke Takeuchi ◽  
Toshiharu Makino ◽  
Hiromitsu Kato ◽  
Masahiko Ogura ◽  
Norio Tokuda ◽  
...  
Keyword(s):  
Electron Affinity ◽  
Electron Emission ◽  
Room Temperature ◽  
Negative Electron Affinity ◽  
Junction Diode ◽  
Room Temperature Operation

Ionization Energy and Electron Affinity of Clean and Oxidized AlxGa1−xN(0001) Surfaces

2001 ◽  
Vol 680 ◽  
Author(s):  
H. Nienhaus ◽  
M. Schneider ◽  
S.P. Grabowski ◽  
W. Mönch ◽  
R. Dimitrov ◽  
...  
Keyword(s):  
Electron Affinity ◽  
Ionization Energy ◽  
Room Temperature ◽  
Aluminum Content ◽  
Composition Range ◽  
Photoemission Spectroscopy ◽  
Negative Electron Affinity ◽  
Atom Flux ◽  
General Chemical ◽  
Good Agreement

ABSTRACTIonization energies and electron affinities of clean AlxGa1−xN(0001) surfaces were investigated by ultraviolet photoemission spectroscopy over the whole composition range. The samples were cleaned with cycles of N+-ion sputtering and annealing partly within a Ga atom flux. The ionization energy is measured as 6.5 eV and is almost independent of the aluminum content in good agreement with the general chemical trend. The electron affinity decreases linearly with composition from 3.1 eV for GaN to 0.25 eV for AlN. No evidence for negative electron affinity at AlN(0001) surfaces was found. Adsorption of oxygen at room temperature leads to a significant increase of the ionization energy and electron affinity. With AlN(0001) surfaces, an oxygen uptake of 0.6 monolayers is observed after exposures of 108 Langmuirs and the ionization energy increases by approximately 2 eV.

Thermionic emission from negative electron affinity silicon

1975 ◽  
Vol 46 (1) ◽  
pp. 151-157 ◽  
Author(s):  
J. R. Howorth ◽  
C. J. R. Sheppard ◽  
R. Holtom ◽  
A. L. Harmer
Keyword(s):  
Electron Affinity ◽  
Thermionic Emission ◽  
Negative Electron Affinity
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