Sub-100 nm KrF lithography for complementary metal–oxide–semiconductor circuits

M. Fritze; D. Astolfi; H. Liu; C. K. Chen; V. Suntharalingam; D. Preble; P. W. Wyatt

doi:10.1116/1.590561

Sub-100 nm KrF lithography for complementary metal–oxide–semiconductor circuits

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590561 ◽

1999 ◽

Vol 17 (2) ◽

pp. 345 ◽

Cited By ~ 5

Author(s):

M. Fritze ◽

D. Astolfi ◽

H. Liu ◽

C. K. Chen ◽

V. Suntharalingam ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Circuits

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Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.51 ◽

2007 ◽

Vol 46 (1) ◽

pp. 51-55 ◽

Cited By ~ 16

Author(s):

Genshiro Kawachi ◽

Yoshiaki Nakazaki ◽

Hiroyuki Ogawa ◽

Masayuki Jyumonji ◽

Noritaka Akita ◽

...

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

High Performance ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Circuits

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n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Modeling in Forward Body Bias Condition for Low Voltage Complementary Metal–Oxide–Semiconductor Circuits Design

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.044301 ◽

2012 ◽

Vol 51 ◽

pp. 044301 ◽

Cited By ~ 1

Author(s):

Hitoshi Aoki ◽

Akira Matsuzawa

Keyword(s):

Metal Oxide ◽

Field Effect Transistor ◽

Low Voltage ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Semiconductor Circuits ◽

Forward Body Bias ◽

Bias Condition

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Combining and matching optical, electron-beam, and x-ray lithographies in the fabrication of Si complementary metal–oxide–semiconductor circuits with 0.1 and sub-0.1 μm features

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588257 ◽

1995 ◽

Vol 13 (6) ◽

pp. 2741 ◽

Cited By ~ 5

Author(s):

Isabel Y. Yang

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Optical Electron ◽

Semiconductor Circuits

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Hybrid carbon nanotube-silicon complementary metal oxide semiconductor circuits

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2800322 ◽

2007 ◽

Vol 25 (6) ◽

pp. 2577 ◽

Cited By ~ 5

Author(s):

I. Meric ◽

V. Caruso ◽

R. Caldwell ◽

J. Hone ◽

K. L. Shepard ◽

...

Keyword(s):

Carbon Nanotube ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Circuits ◽

Hybrid Carbon

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n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Modeling in Forward Body Bias Condition for Low Voltage Complementary Metal–Oxide–Semiconductor Circuits Design

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.044301 ◽

2012 ◽

Vol 51 (4R) ◽

pp. 044301

Author(s):

Hitoshi Aoki ◽

Akira Matsuzawa

Keyword(s):

Metal Oxide ◽

Field Effect Transistor ◽

Low Voltage ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Semiconductor Circuits ◽

Forward Body Bias ◽

Bias Condition

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Characterization of near-terahertz complementary metal-oxide semiconductor circuits using a Fourier-transform interferometer

Review of Scientific Instruments ◽

10.1063/1.3647223 ◽

2011 ◽

Vol 82 (10) ◽

pp. 103106 ◽

Cited By ~ 2

Author(s):

D. J. Arenas ◽

Dongha Shim ◽

D. I. Koukis ◽

Eunyoung Seok ◽

D. B. Tanner ◽

...

Keyword(s):

Fourier Transform ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Circuits

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Reference Complementary Metal–Oxide–Semiconductor Circuits and Test Structures for Evaluation of Dynamic Noise in Power Delivery Networks

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04de01 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DE01 ◽

Cited By ~ 1

Author(s):

Tetsuro Matsuno ◽

Daisuke Kosaka ◽

Makoto Nagata

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Power Delivery ◽

Oxide Semiconductor ◽

Power Delivery Networks ◽

Dynamic Noise ◽

Semiconductor Circuits ◽

Delivery Networks

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Integration of crystalline orientated γ-Al2O3 films and complementary metal–oxide–semiconductor circuits on Si(1 0 0) substrate

Solid-State Electronics ◽

10.1016/j.sse.2014.08.011 ◽

2015 ◽

Vol 103 ◽

pp. 110-114 ◽

Cited By ~ 1

Author(s):

Koji Oishi ◽

Daisuke Akai ◽

Makoto Ishida

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Circuits ◽

Al2o3 Films

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Radiation-Hard and Repairable Complementary Metal–Oxide–Semiconductor Circuits Integrating n-type Indium Oxide and p-type Carbon Nanotube Field-Effect Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c12539 ◽

2020 ◽

Vol 12 (44) ◽

pp. 49963-49970

Author(s):

Manman Luo ◽

Maguang Zhu ◽

Miaomiao Wei ◽

Shuangshuang Shao ◽

Malo Robin ◽

...

Keyword(s):

Carbon Nanotube ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Circuits ◽

P Type ◽

Radiation Hard

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Unipolarization of ambipolar organic field effect transistors toward high-impedance complementary metal-oxide-semiconductor circuits

Applied Physics Letters ◽

10.1063/1.2770963 ◽

2007 ◽

Vol 91 (7) ◽

pp. 071905 ◽

Cited By ~ 18

Author(s):

Wataru Takashima ◽

Tsutomu Murasaki ◽

Shuichi Nagamatsu ◽

Takeomi Morita ◽

Keiichi Kaneto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Organic Field Effect Transistors ◽

High Impedance ◽

Semiconductor Circuits

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