Growth of silicon oxide on hydrogenated silicon during lithography with an atomic force microscope

Author(s):  
F. Marchi
2012 ◽  
Vol 3 ◽  
pp. 52-56 ◽  
Author(s):  
Woo-Kyung Lee ◽  
Minchul Yang ◽  
Arnaldo R Laracuente ◽  
William P King ◽  
Lloyd J Whitman ◽  
...  

Polymer nanostructures were directly written onto substrates in ultra-high vacuum. The polymer ink was coated onto atomic force microscope (AFM) probes that could be heated to control the ink viscosity. Then, the ink-coated probes were placed into an ultra-high vacuum (UHV) AFM and used to write polymer nanostructures on surfaces, including surfaces cleaned in UHV. Controlling the writing speed of the tip enabled the control over the number of monolayers of the polymer ink deposited on the surface from a single to tens of monolayers, with higher writing speeds generating thinner polymer nanostructures. Deposition onto silicon oxide-terminated substrates led to polymer chains standing upright on the surface, whereas deposition onto vacuum reconstructed silicon yielded polymer chains aligned along the surface.


1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 379-382 ◽  
Author(s):  
Yoshinobu Fukano ◽  
Takayuki Uchihashi ◽  
Takahiro Okusako ◽  
Ayumi Chayahara ◽  
Yasuhiro Sugawara ◽  
...  

2008 ◽  
Vol 8 (9) ◽  
pp. 4757-4760 ◽  
Author(s):  
Yong-il Kim ◽  
Hyunsook Kim ◽  
Haiwon Lee

AMF anodization lithography was performed on organic thin films with conducting polymers which is poly(3,4-ethylenedioxythiophene). The conductivity of PEDOT thin films was changed by different dopants and organic solvents. Two different dopants are poly(4-styrenesulfonate) and di(2-ethylhexyl)-sulfosuccinate. Also, DMF and IPA were used to prepare the PEDOT thin films doped with PSS and DEHS on silicon surface. The conductivities of these PEDOT variants were compared by obtaining their I–V curves between tip and thin films using AFM. Silicon oxide nanopatterns with higher aspect ratios can be obtained from the films with higher conductivity.


Tribology ◽  
2006 ◽  
Author(s):  
Marissa J. Post ◽  
J. Liu ◽  
J. Du ◽  
S. R. Schmid ◽  
T. Ovaert ◽  
...  

Silicon oxides are widespread in microelectronics and microelectromechanical systems (MEMS) applications. One form of this material that has been suggested as a dielectric in MEMS applications is a carbon-doped form of silicon oxide that can be produced in thin coatings. However, the mechanical properties and wear resistance of these coatings is unknown, and coatings of interest are difficult to characterize because they are very thin. A test methodology has been previously described using extremely sharp diamond tips on a stainless steel cantilever in an atomic force microscope, and this method allows direct calculation of an effective material flow strength at penetration depths as small as twenty nanometers. A number of forms of carbon-doped and undoped silicon dioxide have been evaluated using this methodology. Size effects on material properties are evaluated, and correlations between test methods are presented.


2003 ◽  
Vol 776 ◽  
Author(s):  
Meng Yu ◽  
Albena Ivanisevic

AbstractWe present a methodology based on Dip-Pen Nanolithography 1 to fabricate nanoscale surface patterns composed of polyelectrolytes. Two widely used polymers Poly(diallyldimethylammonium chloride) (PDDA) and Poly(sodium 4-styrenesulfonate) PSS were chosen as the DPN “inks”. Patterns were created and evaluated on silicon oxide surfaces using an Atomic Force Microscope (AFM). To compare the polymer packing and the height of the nanopatterns, additional fabrication was performed using microcontact printing. We were able to generate structures with better polymer packing using DPN and control the height of the polymer structures more reproducibly compared to microcontact printing.


1994 ◽  
Author(s):  
Yoshinobu FUKANO ◽  
Takahiro OKUSAKO ◽  
Takayuki UCHIHASHI ◽  
Yasuhiro SUGAWARA ◽  
Yoshiki YAMANISHI ◽  
...  

2014 ◽  
Vol 56 (12) ◽  
pp. 1343-1346 ◽  
Author(s):  
A. A. Efimov ◽  
V. V. Ivanov ◽  
I. A. Volkov ◽  
A. A. Lizunova ◽  
S. V. Lisovskii ◽  
...  

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