Incremental-growth model for the deposition of spatially modulated thin film nanostructures

1998 ◽  
Vol 16 (5) ◽  
pp. 2811 ◽  
Author(s):  
Ian Hodgkinson
Keyword(s):  
Thin Film ◽  
Growth Model ◽  
Incremental Growth ◽  
Thin Film Nanostructures

Epitaxial orientation and a growth model of (00·1) GaN thin film on (111) spinel substrate

1998 ◽  
Vol 189-190 ◽  
pp. 202-207 ◽  
Author(s):  
Hitoshi Ohsato ◽  
Tomohisa Kato ◽  
Shihoko Koketsu ◽  
Rajesh Dayal Saxena ◽  
Takashi Okuda
Keyword(s):  
Thin Film ◽  
Growth Model

Thin-film nanostructures: Substructural aspects

2004 ◽  
Vol 40 (S2) ◽  
pp. S71-S90 ◽  
Author(s):  
V. M. Ievlev
Keyword(s):  
Thin Film ◽  
Thin Film Nanostructures

The Removal of In2O3SnO4 Thin Film Using an Arc-Form Tool for the Precision Recycling of Defective Digital-Paper

2013 ◽  
Vol 668 ◽  
pp. 288-291
Author(s):  
P.S. Pa
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Electrochemical Etching ◽  
Removal Rate ◽  
High Rotational Speed ◽  
Digital Paper ◽  
Higher Temperature ◽  
Pulsed Direct Current ◽  
Gap Width ◽  
Thin Film Nanostructures

A newly designed arc-form shaped tool was used to carry out precise micro electrochemical etching (MECE) to remove Indium-tin-oxide (In2O3SnO2) thin-film nanostructures from the optical PET diaphragm surfaces for digital-paper surface. For this precise removal process, a higher current with a faster feed rate of the optical PET diaphragm effectively achieved rapid material removal. A pulsed direct current can improve dregs discharge and is advantageous when associated with fast PET feed rates, but this raises the total current required. A higher temperature or flow velocity of the electrolyte corresponds to a higher removal rate of the In2O3SnO2 nanostructures. A high rotational speed of the arc-form shaped tool corresponds to a higher removal rate of In2O3SnO2. A large cathode, along with a small gap-width between the cathode and the PET diaphragm, increases In2O3SnO2 removal rates. A thin cathode, or a short arc length of the arc-form anode, reduces the time taken for In2O3SnO2 removal.

scholarly journals Highly coercive thin-film nanostructures

2005 ◽  
Vol 290-291 ◽  
pp. 227-230 ◽  
Author(s):  
J. Zhou ◽  
R. Skomski ◽  
A. Kashyap ◽  
K.D. Sorge ◽  
Y. Sui ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Nanostructures

Metal complexes of thiobiurets and dithiobiurets: Novel single source precursors for metal sulfide thin film nanostructures

2010 ◽  
Vol 39 (6) ◽  
pp. 1460-1463 ◽  
Author(s):  
Karthik Ramasamy ◽  
Mohammad A. Malik ◽  
Paul O'Brien ◽  
James Raftery
Keyword(s):  
Thin Film ◽  
Metal Complexes ◽  
Metal Sulfide ◽  
Single Source ◽  
Single Source Precursors ◽  
Thin Film Nanostructures

Physical property exploration of highly oriented V2O5 thin films prepared by electron beam evaporation

2015 ◽  
Vol 39 (12) ◽  
pp. 9471-9479 ◽  
Author(s):  
Shrividhya Thiagarajan ◽  
Mahalingam Thaiyan ◽  
Ravi Ganesan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Single Phase ◽  
Physical Property ◽  
Electron Beam Evaporation ◽  
V2o5 Thin Films ◽  
Thin Film Nanostructures

Highly crystalline α-V2O5 thin film nanostructures with a single phase exhibiting higher mobility were prepared by the EB-PVD technique.

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