Interface states induced in GaAs by growth interruption during an in situ process

1998 ◽  
Vol 16 (4) ◽  
pp. 2313 ◽  
Author(s):  
F. Wakaya
Keyword(s):  
Interface States ◽  
Growth Interruption

Effect of Growth Interruption on the Properties of GaInAsSb/AlGaAsSb/GaSb Heterostructures and the Performance of Thermophotovoltaic Devices

2003 ◽  
Vol 763 ◽  
Author(s):  
C.A. Wang ◽  
D.A. Shiau ◽  
M.K. Connors ◽  
L.R. Danielson ◽  
G. Nichols ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Growth Interruption ◽  
Double Heterostructures ◽  
Interfacial Recombination ◽  
Recombination Velocity

AbstractThe effect of growth interruption on the properties of GaInAsSb/(Al)Ga(As)Sb heterostructures and on the performance of GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) devices grown by organometallic vapor phase epitaxy is reported. In-situ reflectance monitoring is shown to be sensitive for observation of surface degradation during growth interruption, and this data was correlated with materials characterization by high-resolution x-ray diffraction and 4K photoluminescence (PL). Minority-carrier lifetime by time-resolved PL was used to determine interfacial recombination velocity of GaInAsSb/AlGaAsSb and GaInAsSb/GaSb double heterostructures grown with and without interruption, respectively. GaInAsSb/AlGaAsSb TPV devices grown without growth interruption have a slightly higher performance compared to those grown with interruption.

In-situ nitrogen plasma passivation of Al2O3/GaN interface states

2015 ◽  
Vol 33 (2) ◽  
pp. 020602 ◽  
Author(s):  
Junwoo Son ◽  
Varistha Chobpattana ◽  
Brian M. McSkimming ◽  
Susanne Stemmer
Keyword(s):  
Nitrogen Plasma ◽  
Interface States ◽  
Plasma Passivation

Effects of growth interruption in in situ process for buried quantum structures

1998 ◽  
Vol 41-42 ◽  
pp. 591-594
Author(s):  
F. Wakaya ◽  
T. Matsubara ◽  
M. Nakayama ◽  
J. Yanagisawa ◽  
Y. Yuba ◽  
...  
Keyword(s):  
Quantum Structures ◽  
Growth Interruption

Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments

2021 ◽  
Vol 118 (9) ◽  
pp. 093503
Author(s):  
Fuqiang Guo ◽  
Sen Huang ◽  
Xinhua Wang ◽  
Tiantian Luan ◽  
Wen Shi ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Interface States ◽  
Remote Plasma ◽  
Gan Heterostructure

Rendez vous with Saturn's rings

1984 ◽  
Vol 75 ◽  
pp. 743-759 ◽  
Author(s):  
Kerry T. Nock
Keyword(s):  
Solar Energy ◽  
Electric Propulsion ◽  
Power Source ◽  
Propulsion System ◽  
Low Thrust ◽  
Ring Plane ◽  
The Earth ◽  
Total Impulse ◽  
Saturn's Rings

ABSTRACTA mission to rendezvous with the rings of Saturn is studied with regard to science rationale and instrumentation and engineering feasibility and design. Future detailedin situexploration of the rings of Saturn will require spacecraft systems with enormous propulsive capability. NASA is currently studying the critical technologies for just such a system, called Nuclear Electric Propulsion (NEP). Electric propulsion is the only technology which can effectively provide the required total impulse for this demanding mission. Furthermore, the power source must be nuclear because the solar energy reaching Saturn is only 1% of that at the Earth. An important aspect of this mission is the ability of the low thrust propulsion system to continuously boost the spacecraft above the ring plane as it spirals in toward Saturn, thus enabling scientific measurements of ring particles from only a few kilometers.

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