Thermal stability of selective chemical vapor deposited tungsten contact and effects of in situ N[sub 2] plasma treatment

1998 ◽  
Vol 16 (4) ◽  
pp. 2026 ◽  
Author(s):  
M. T. Wang
Keyword(s):  
Thermal Stability ◽  
Plasma Treatment ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Selective Chemical ◽  
Thermal Stability Of

Thermal Stability of Amorphous-like WNx/W Bilayered Diffusion Barrier for Chemical Vapor Deposited-Tungsten/p+-Si Contact System

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1343-1351 ◽  
Author(s):  
Kow-Ming Chang ◽  
I-Chung Deng ◽  
Ta-Hsun Yeh ◽  
Kuen-Der Lain ◽  
Chao-Ming Fu
Keyword(s):  
Thermal Stability ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Contact System ◽  
Chemical Vapor Deposited ◽  
Thermal Stability Of

TEM Studies of Plasma Deposited Tungsten and Tungsten Nitride Barriers for Thermally Stable Metallization

1993 ◽  
Vol 318 ◽  
Author(s):  
Chang Woo Lee ◽  
Yong Tae Kim ◽  
Suk-Ki Min ◽  
Choochon Lee ◽  
Jeong Yong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Compressive Stress ◽  
Lattice Constant ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Tungsten Nitride ◽  
Si Substrate ◽  
Chemical Vapor Deposited ◽  
Thermal Stability Of

ABSTRACTPlasma enhanced chemical vapor deposited tungsten nitride (PECVD-W67N33) thin film has been proposed as a diffusion barrier. The resistivity and lattice constant of PECVD-W67N33 are 110-28 μΩ-cm and 4.134 Å, respectively and this film has compressive stress of 2.6 × 1010 dyne/cm2. Thermal stability of PECVD-W67N33 as a diffusion barrier reveals that the interdiffusions between Al or W and Si substrate can be prevented by N interstitial atoms in fcc-W2N grains and grain boundaries.

An in situ TEM observation on the thermal stability of a nanocrystalline FeBSi alloy

1993 ◽  
Vol 16 (5) ◽  
pp. 260-264 ◽  
Author(s):  
H.Y. Tong ◽  
B.Z. Ding ◽  
H.G. Jiang ◽  
Z.Q. Hu ◽  
L. Dong ◽  
...  
Keyword(s):  
Thermal Stability ◽  
In Situ Tem ◽  
Thermal Stability Of

In-Situ Annealing Study on the Thermal Stability of Nickel Germanides

2007 ◽  
Vol 50 (3) ◽  
pp. 677 ◽  
Author(s):  
Jae-Wook Jae-Wook ◽  
Kyung-Hwan Kyung-Hwan ◽  
Hyoungsub Hyoungsub ◽  
Cheol-Woong Cheol-Woong ◽  
Dongwon Dongwon ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Nickel Germanides ◽  
Annealing Study ◽  
Thermal Stability Of

scholarly journals Thermal Stability of Octadecyltrichlorosilane and Perfluorooctyltriethoxysilane Monolayers on SiO2

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 210
Author(s):  
Xiangdong Yang ◽  
Haitao Wang ◽  
Peng Wang ◽  
Xuxin Yang ◽  
Hongying Mao
Keyword(s):  
Thermal Stability ◽  
Thermal Behavior ◽  
Work Function ◽  
Photoelectron Spectroscopy ◽  
Vacuum Annealing ◽  
Moderate Temperature ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
X Ray ◽  
Thermal Stability Of

Using in situ ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) measurements, the thermal behavior of octadecyltrichlorosilane (OTS) and 1H, 1H, 2H, and 2H-perfluorooctyltriethoxysilane (PTES) monolayers on SiO2 substrates has been investigated. OTS is thermally stable up to 573 K with vacuum annealing, whereas PTES starts decomposing at a moderate temperature between 373 K and 423 K. Vacuum annealing results in the decomposition of CF3 and CF2 species rather than desorption of the entire PTES molecule. In addition, our UPS results reveal that the work function (WF)of OTS remains the same after annealing; however WF of PTES decreases from ~5.62 eV to ~5.16 eV after annealing at 573 K.

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