Surface composition and morphology of chemical beam epitaxy grown GaN thin films

Author(s):  
Esther Kim
2011 ◽  
Vol 158 (2) ◽  
pp. D72 ◽  
Author(s):  
Ali Dabirian ◽  
Scott Harada ◽  
Yury Kuzminykh ◽  
Silviu Cosmin Sandu ◽  
Estelle Wagner ◽  
...  

1995 ◽  
Vol 246 (1-2) ◽  
pp. 156-162 ◽  
Author(s):  
J. Beyer ◽  
Th. Schurig ◽  
S. Menkel ◽  
Z. Quan ◽  
H. Koch

2013 ◽  
Vol 384 ◽  
pp. 5-8 ◽  
Author(s):  
Hidetoshi Suzuki ◽  
Akio Suzuki ◽  
Atsuhiko Fukuyama ◽  
Tetsuo Ikari

2007 ◽  
Vol 156-158 ◽  
pp. 405-408 ◽  
Author(s):  
M.F. Carazzolle ◽  
S.S. Maluf ◽  
A. de Siervo ◽  
P.A.P. Nascente ◽  
R. Landers ◽  
...  

1990 ◽  
Vol 200 ◽  
Author(s):  
Chi K. Kwok ◽  
Seshu B. Desu ◽  
Lee Kammerdiner

ABSTRACTFerroelectric and transparent lead–zirconate–titanate thin films were fabricated by rf sputtering. The substrates used were Pt–coated single crystal silicon. The deposition temperatures were relatively low (≅ 200°C). Annealing at high temperatures yielded first pyrochlore type and finally perovskite with good switching characteristics. The phase structure, microstructure, surface composition, and properties were measured as a function annealing time and temperature. In general, the Pb concentration on the surface decreased with increasing annealing temperature or time, whereas Zr concentration increased. It was observed that the grain size of perovskite PZT did not show any significant changes with increasing either anneal temperature or time.


MRS Bulletin ◽  
1994 ◽  
Vol 19 (9) ◽  
pp. 39-43 ◽  
Author(s):  
Jean-Pierre Locquet ◽  
Erich Mächler

Since the discovery of superconductivity in layered cuprates there has been a strong desire to grow thin films of these materials in a so-called layer-by-layer manner, where each layer represents one atomic monolayer. There has been worldwide interest in this problem and numerous groups have invested time and equipment in an attempt, first, to grow the known materials using a sequential deposition technique so that the atomic monolayers are stacked artificially on top of one another in a sequence defined by the structure of the given unit cell, and second, to search for new stacking sequences of such atomic monolayers, thus making metastable compounds.Understanding the growth of thin films using any deposition technique requires information about two fundamental processes, the nucleation of a crystal and its growth. Both are strongly affected by the three thermodynamic parameters, temperature, pressure, and chemical potential (composition), at the growth front. The third parameter, the surface composition from which the desired compound can nucleate and propagate, probably provides the greatest degree of freedom in the growth process. The compositional phase diagrams of most cuprates show that several phases can coexist with the superconducting phase at a certain temperature and pressure. This is also the main reason why a widely changing surface composition, such as that present during layer-by-layer or block-by-block deposition, still produces high-quality thin films.


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