Atomic force microscopy correlated with spectroscopic ellipsometry during homepitaxial growth on GaAs(111)B substrates

1998 ◽  
Vol 16 (3) ◽  
pp. 1479 ◽  
Author(s):  
D. H. Tomich
Keyword(s):  
Atomic Force Microscopy ◽  
Spectroscopic Ellipsometry ◽  
Force Microscopy ◽  
Atomic Force

Roughness evolution of high-rate deposited a-SiNx:H films studied by atomic force microscopy and real time spectroscopic ellipsometry

2004 ◽  
Vol 808 ◽  
Author(s):  
P.J. van den Oever ◽  
M.C.M. van de Sanden ◽  
W.M.M. Kessels
Keyword(s):  
Atomic Force Microscopy ◽  
Silicon Nitride ◽  
Real Time ◽  
Spectroscopic Ellipsometry ◽  
Mass Density ◽  
High Rate ◽  
Growth Exponent ◽  
Force Microscopy ◽  
Atomic Force ◽  
Roughness Exponent

ABSTRACTThe scaling behavior of the roughness evolution of silicon nitride (a-SiNx:H) films with different mass densities (deposited from SiH4-N2-H2 and SiH4-NH3 based plasmas) has been investigated by atomic force microscopy and real time spectroscopic ellipsometry. The observed roughness exponent a is similar for both films, whereas the growth exponent b is a factor of two smaller for the higher density films. The relation between the lower value of b and the higher mass density is discussed.

Sign in / Sign up

Export Citation Format

Share Document