Electrical and optical properties of Sn doped CuInO2 thin films: Conducting atomic force microscopy and spectroscopic ellipsometry studies

2009 ◽  
Vol 106 (5) ◽  
pp. 053709 ◽  
Author(s):  
Mandeep Singh ◽  
B. R. Mehta ◽  
Deepak Varandani ◽  
V. N. Singh
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Optical Properties ◽  
Spectroscopic Ellipsometry ◽  
Electrical And Optical Properties ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Morphology and Spectroscopic Ellipsometry of PMMA Thin Films

2017 ◽  
Vol 9 (2) ◽  
pp. 5 ◽  
Author(s):  
H. M. El-Nasser
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spectroscopic Ellipsometry ◽  
Silicon Substrates ◽  
Analysis Method ◽  
Force Microscopy ◽  
Atomic Force ◽  
Mean Grain Size ◽  
Multiple Sample ◽  
Ellipsometry Data

The morphology and optical properties of PMMA thin films deposited on silicon substrates were investigated. The spin coated films were characterized by atomic force microscopy and spectroscopic ellipsometry. Regardless that, the samples were deposited at different coating speeds, the surface structures of all PMMA thin films were consistent, and found to be relatively smooth, with a mean grain size in the range of 13-25 nm. The refractive index as well as the extinction coefficient of the films was determined using spectroscopic ellipsometry data over the wavelength range 380-750 nm. For this purpose, we used the Cauchy dispersion relation in order to represent PMMA layers, and then models were built by adding a roughness layer, which simply corrects any possible deviation from planarity. Besides, the thicknesses of all four films were calculated simultaneously based on multiple sample analysis method. By using this method, optical properties were coupled in such way that, the optical constants for all samples were assumed to be identical.

Interfacial Roughness in GaAs/A1GaAs Multilayers: Influence of Controlled Impurity Addition

1994 ◽  
Vol 332 ◽  
Author(s):  
S. Nayak ◽  
J.M. Redwing ◽  
T.F. Kuech ◽  
D.E. Savage ◽  
M.G. Lagally
Keyword(s):  
Atomic Force Microscopy ◽  
Optical Properties ◽  
Correlation Length ◽  
Interfacial Structure ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
Interfacial Roughness ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Impurities at heterointerfaces can alter the interfacial structure resulting in changes in physical, electrical and optical properties. We present a study of the interfacial roughness of GaAs/A1xGa1-xAs superlattices which were grown using controlled addition of oxygen at the interface. The interfacial properties were characterized by x-ray diffraction. The morphology of the surface was determined by Atomic Force Microscopy (AFM). X-ray diffraction measurements, both θ-2θ and rocking curves, were used to analyze the correlated and uncorrelated component of the interfacial roughness. A strong difference in the interfacial roughness was observed depending on whether the intentional oxygen incorporation occurred at the GaAs-to-A1GaAs interface or at both interfaces. When oxygen is incorporated at both interfaces, the x- ray reflectivity of the superlattice is decreased considerably resulting from a much higher interfacial roughness. The substrate miscut has a significant effect on RMS roughness, correlated roughness and its correlation length when oxygen is incorporated at the GaAs-to-A1xGa1-xAs interface.

Atomic force microscopy of in situ deformed nickel thin films

1999 ◽  
Vol 353 (1-2) ◽  
pp. 194-200 ◽  
Author(s):  
C. Coupeau ◽  
J.F. Naud ◽  
F. Cleymand ◽  
P. Goudeau ◽  
J. Grilhé
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Nickel Thin Films ◽  
Atomic Force
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