Quantification of secondary-ion-mass spectroscopy depth profiles using maximum entropy deconvolution with a sample independent response function

1998 ◽  
Vol 16 (1) ◽  
pp. 377 ◽  
Author(s):  
M. G. Dowsett
Keyword(s):  
Maximum Entropy ◽  
Response Function ◽  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Depth Profiles ◽  
Maximum Entropy Deconvolution ◽  
Secondary Ion

Diffusion of Ion Implanted Ruthenium and Osmium IN GaAs and InP

1993 ◽  
Vol 316 ◽  
Author(s):  
M. Kuttler ◽  
A. Knecht ◽  
D. Bimberg ◽  
H. Kräutle
Keyword(s):  
Structural Properties ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Diffusion Processes ◽  
Rutherford Backscattering ◽  
Uphill Diffusion ◽  
Secondary Ion Mass Spectroscopy ◽  
Depth Profiles ◽  
Annealing Procedure ◽  
Secondary Ion

ABSTRACTThe redistribution of the dopants Ru and Os implanted into GaAs and InP as well as the structural properties of the hosts are investigated in dependence of the annealing procedure. Results of Rutherford backscattering and secondary-ion-mass-spectroscopy experiments are presented. The RBS results of Os in GaAs annealed at 850°C indicate that an amount of about 1018 cm-3 Os is on substitutional sites. Two different diffusion processes are observed: an uphill diffusion in the amorphized region and a Fick-type diffusion in the tail of the depth profiles. The diffusion coefficients for Ru in GaAs at 850°C and Os in InP at 750°C are estimated to 4*10-14 cm2s-1 and 8*10-15 cm2s-1, respectively.

Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

2004 ◽  
Vol 809 ◽  
Author(s):  
Mudith S. A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Arthur F. W. Willoughby
Keyword(s):  
Computer Simulation ◽  
Point Defect ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectroscopy ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Before And After ◽  
Secondary Ion

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

Metal—Polyimide Interfaces Characterized by Secondary Ion Mass Spectroscopy

1990 ◽  
pp. 297-311 ◽  
Author(s):  
B. K. Furman ◽  
S. Purushothaman ◽  
E. Castellani ◽  
S. Renick ◽  
D. Neugroshl
Keyword(s):  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion
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