Characterization of low-energy (100 eV–10 keV) boron ion implantation

Author(s):  
E. J. H. Collart
Keyword(s):  
2016 ◽  
Vol 109 (6) ◽  
pp. 063502 ◽  
Author(s):  
J. B. S. Abraham ◽  
B. A. Aguirre ◽  
J. L. Pacheco ◽  
G. Vizkelethy ◽  
E. Bielejec

Author(s):  
A. I. Ryabchikov ◽  
A. I. Ivanova ◽  
O. S. Korneva ◽  
D. O. Sivin

2020 ◽  
pp. 110541
Author(s):  
C.A. Hernández-Gutiérrez ◽  
Yuriy Kudriavtsev ◽  
Dagoberto Cardona ◽  
A.G. Hernández ◽  
J.L. Camas-Anzueto

1986 ◽  
Vol 97 (2) ◽  
pp. K135-K139 ◽  
Author(s):  
J. Bollmann ◽  
H. Klose ◽  
A. Mertens
Keyword(s):  

2008 ◽  
Vol 93 (7) ◽  
pp. 073102 ◽  
Author(s):  
M. C. Salvadori ◽  
M. Cattani ◽  
F. S. Teixeira ◽  
I. G. Brown

2016 ◽  
Vol 18 (1) ◽  
pp. 458-465 ◽  
Author(s):  
Hisao Kiuchi ◽  
Takahiro Kondo ◽  
Masataka Sakurai ◽  
Donghui Guo ◽  
Junji Nakamura ◽  
...  

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.


2016 ◽  
Vol 30 (4) ◽  
pp. 805-812
Author(s):  
Ting Wang ◽  
Weidong Qian ◽  
Yunfang Fu ◽  
Changlong Cai ◽  
Peihong Mao

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