Molecular beam epitaxy of highly mismatched In[sub 0.73]Ga[sub 0.27]As on InP for near-infrared photodetectors

1997 ◽  
Vol 15 (2) ◽  
pp. 316 ◽  
Author(s):  
R. Kochhar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Infrared Photodetectors

A Study of GaAs1–xSbx Axial Nanowires Grown on Monolayer Graphene by Ga-Assisted Molecular Beam Epitaxy for Flexible Near-Infrared Photodetectors

2019 ◽  
Vol 2 (7) ◽  
pp. 4528-4537 ◽  
Author(s):  
Surya Nalamati ◽  
Manish Sharma ◽  
Prithviraj Deshmukh ◽  
Jeffrey Kronz ◽  
Robert Lavelle ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Monolayer Graphene ◽  
Infrared Photodetectors

A Comparison of (100) Hg1−x Cdx Te and Hg1−x ZnxTe Grown By Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
R. D. Feldman ◽  
R. F. Austin ◽  
P. M. Bridenbaugh
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Wave Length ◽  
High Electron ◽  
Mbe Growth ◽  
Suitable Material ◽  
Zn Content ◽  
Length Range ◽  
Very High

ABSTRACTFilms of HgCdTe with x < 0.6 and of HgZnTe with x < 0.26 have been grown by molecular beam epitaxy (MBE). Very high electron mobilities have been achieved for both materials in the small bandgap region. Hall mobilities at 77K reach 4.8 × 105 cm2 /V-s for Hg0 87 Zn0.13 Te, and 3.1 × 105 cm2/V-s for Hg0.87 Zn0.13 Te. HgCdTe growth was easily extended to the 1.5 – 3 μm wave length range. Attempts to extend HgZnTe to these bandgaps were unsuccessful due to defects that are induced by surface roughness in high Zn-content films. These results suggest that HgCdTe is the more suitable material for MBE growth for near infrared applications.

Near-infrared intersubband absorption in InGaAs/AlAsSb grown by molecular beam epitaxy

1999 ◽  
Vol 201-202 ◽  
pp. 1077-1080 ◽  
Author(s):  
Teruo Mozume ◽  
Haruhiko Yoshida ◽  
Arup Neogi ◽  
Makoto Kudo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Intersubband Absorption

scholarly journals Near-infrared optical absorption in GaN/AlN quantum wells grown by molecular-beam epitaxy

2020 ◽  
Vol 1482 ◽  
pp. 012021
Author(s):  
M Ya Vinnichenko ◽  
A D Fedorov ◽  
N Yu Kharin ◽  
V Yu Panevin ◽  
D A Firsov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Optical Absorption ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Near Infrared
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