Monte Carlo study of hot electron and ballistic transport in diamond: Low electric field region

1996 ◽  
Vol 14 (3) ◽  
pp. 2020 ◽  
Author(s):  
P. H. Cutler
Keyword(s):  
Monte Carlo ◽  
Electric Field ◽  
Ballistic Transport ◽  
Monte Carlo Study ◽  
Field Region ◽  
Hot Electron

Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices

2011 ◽  
Vol 470 ◽  
pp. 14-19
Author(s):  
Yoshinari Kamakura ◽  
Tomofumi Zushi ◽  
Takanobu Watanabe ◽  
Nobuya Mori ◽  
Kenji Taniguchi
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Heat Dissipation ◽  
Hot Spot ◽  
Local Heating ◽  
Ballistic Transport ◽  
Hot Electron ◽  
Optical Phonons ◽  
Monte Carlo Simulation Technique ◽  
Ballistic Electron

Hot phonon generation and its impact on the current conduction in a nanoscale Si-device are investigated using a Monte Carlo simulation technique. In the quasi-ballistic transport regime, electrons injected from the source lose their energies mainly by emitting optical phonons in the drain. Due to the slow group velocity of the optical phonons, the efficiency of the heat dissipation is so poor that a region with a nonequilibrium phonon distribution, i.e., a hot spot, is created. In this study, we have implemented the hot phonon effect in an ensemble Monte Carlo simulator for the electron transport, and carried out the steady state simulations. Although it is confirmed that the optical phonon temperature in the hot spot is larger than that of acoustic phonons by > 100 K, the electron current density is not significantly affected. The local heating would degrade the hot electron cooling efficiency and the parasitic resistance in the drain, but they have a minor impact on the quasi-ballistic electron transport from the source to the drain.

Detailed Phonon Generation Simulations via the Monte Carlo Method

2003 ◽  
Author(s):  
Eric Pop ◽  
Sanjiv Sinha ◽  
Kenneth E. Goodson
Keyword(s):  
Monte Carlo ◽  
Electric Field ◽  
Heat Generation ◽  
Energy Exchange ◽  
Phonon Mode ◽  
Field Region ◽  
The Monte Carlo Method ◽  
Phonon Generation ◽  
Mc Simulation ◽  
Non Locality

Modeling heat generation at nanometer scales in silicon is of great interest and particularly relevant to the heating and reliability of nanoscale and thin-film transistors. Joule heating is usually simulated as the dot product of the macroscopic electric field and current density [1]. This approach does not account for the microscopic non-locality of the phonon emission near a strongly peaked electric field region. It also does not differentiate between electron energy exchange with the various phonon branches and does not give any information regarding the types of phonons emitted. The present work addresses both of these issues: we use a detailed Monte Carlo (MC) simulation to compute sub-continuum and phonon mode-specific heat generation rates, with applications at nanometer length scales.

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