Detailed Phonon Generation Simulations via the Monte Carlo Method

2003 ◽  
Author(s):  
Eric Pop ◽  
Sanjiv Sinha ◽  
Kenneth E. Goodson
Keyword(s):  
Monte Carlo ◽  
Electric Field ◽  
Heat Generation ◽  
Energy Exchange ◽  
Phonon Mode ◽  
Field Region ◽  
The Monte Carlo Method ◽  
Phonon Generation ◽  
Mc Simulation ◽  
Non Locality

Modeling heat generation at nanometer scales in silicon is of great interest and particularly relevant to the heating and reliability of nanoscale and thin-film transistors. Joule heating is usually simulated as the dot product of the macroscopic electric field and current density [1]. This approach does not account for the microscopic non-locality of the phonon emission near a strongly peaked electric field region. It also does not differentiate between electron energy exchange with the various phonon branches and does not give any information regarding the types of phonons emitted. The present work addresses both of these issues: we use a detailed Monte Carlo (MC) simulation to compute sub-continuum and phonon mode-specific heat generation rates, with applications at nanometer length scales.

THE MONTE-CARLO SIMULATION OF TRANSPORT IN QUANTUM WELL GaAs/AlGaAs HETEROSTRUCTURE DOPED WITH SHALLOW DONORS UNDER IMPURITY BREAKDOWN

2007 ◽  
Vol 06 (03n04) ◽  
pp. 253-256
Author(s):  
L. V. GAVRILENKO ◽  
V. YA. ALESHKIN ◽  
A. A. DUBINOV
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Distribution Function ◽  
Monte Carlo Method ◽  
Electric Field ◽  
Electron Concentration ◽  
Ground State ◽  
Population Inversion ◽  
Rate Equations ◽  
The Monte Carlo Method

The impurity breakdown was simulated in numerical calculations. The distribution function for an electron in the electric field was calculated using the Monte-Carlo method. The electron concentration in the impurity ground state and in the first subband was determined by solving the rate equations. It was found out that a population inversion between the 1s-level and the bottom of the first subband is likely to arise. The requirements for the population inversion to occur were determined.

Monte Carlo Modeling of Heat Generation in Electronic Nanostructures

2002 ◽  
Author(s):  
Eric Pop ◽  
Sanjiv Sinha ◽  
Kenneth E. Goodson
Keyword(s):  
Monte Carlo ◽  
Electric Field ◽  
Heat Generation ◽  
Microscopic Analysis ◽  
Simulation Method ◽  
Transfer Rates ◽  
Scattering Rate ◽  
Energy Dependent ◽  
Non Equilibrium ◽  
Mc Method

This work develops a Monte Carlo (MC) simulation method for calculating the heat generation rate in electronic nanostructures. Electrons accelerated by the electric field scatter strongly with optical phonons, yet heat transport in silicon occurs via the faster acoustic modes. The MC method incorporates the appropriate energy transfer rates from electrons to each phonon branch. This accounts for the non-equilibrium energy exchange between the electrons and phonon branches. Using the MC method with an electron energy-dependent scattering rate intrinsically accounts for the non-locality of the heat transfer near a strongly peaked electric field. This approach provides more information about electronically generated heat at nanoscale dimensions compared to traditional macroscopic field-dependent methods. The method has applications in any region of high spatial or temporal non-equilibrium between electrons and phonons, and particularly facilitates careful microscopic analysis of heating in a nanoscale transistor.

Electro-Thermal Analysis and Monte Carlo Simulation for Thermal Issue in Si Devices

2009 ◽  
Author(s):  
Tomoyuki Hatakeyama ◽  
Kazuyoshi Fushinobu ◽  
Ken Okazaki ◽  
Masaru Ishizuka
Keyword(s):  
Thermal Analysis ◽  
Monte Carlo ◽  
Relaxation Time ◽  
Energy Conservation ◽  
Heat Generation ◽  
Relaxation Times ◽  
Conservation Equation ◽  
Energy Conservation Equation ◽  
Precise Prediction ◽  
Mc Simulation

Nowadays, precise prediction of the heat generation in semiconductor devices is significant. Electro-thermal analysis is one of the attractive methods to predict the heat generation in devices. However, in electro-thermal analysis, the relaxation time approximation is applied to calculate the scattering term in momentum and energy conservation equation. And the assumption of the constant relaxation time for the scattering term of energy conservation equation and the momentum relaxation time derived from the empirical carrier mobility are conventionally applied. For precise prediction of the relaxation times, Monte Carlo (MC) simulation can be applied. In this research, we consider the importance of these relaxation times for heat generation in semiconductor devices. We compare the results with conventional relaxation times and those with the relaxation time from MC simulation in electro-thermal analysis. The calculation results show the electro-thermal analysis with the conventional relaxation time model will overestimate the heat generation density in lower electric field of devices and in higher clock frequency devices.

UGR CALCULATION BASED ON THE LUMINANCE SPATIAL-ANGULAR DISTRIBUTION

2020 ◽  
Vol 2020 (4) ◽  
pp. 25-32
Author(s):  
Viktor Zheltov ◽  
Viktor Chembaev
Keyword(s):  
Monte Carlo ◽  
Angular Distribution ◽  
Monte Carlo Method ◽  
Visual Task ◽  
New Method ◽  
Lighting System ◽  
Preliminary Assessment ◽  
System A ◽  
The Monte Carlo Method

The article has considered the calculation of the unified glare rating (UGR) based on the luminance spatial-angular distribution (LSAD). The method of local estimations of the Monte Carlo method is proposed as a method for modeling LSAD. On the basis of LSAD, it becomes possible to evaluate the quality of lighting by many criteria, including the generally accepted UGR. UGR allows preliminary assessment of the level of comfort for performing a visual task in a lighting system. A new method of "pixel-by-pixel" calculation of UGR based on LSAD is proposed.

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