Role of structural and chemical contributions to valence-band offsets at strained-layer heterojunctions: The GaAs/GaP (001) case

1996 ◽  
Vol 14 (4) ◽  
pp. 2936 ◽  
Author(s):  
M. Di Ventra
Keyword(s):  
Valence Band ◽  
Band Offsets ◽  
Strained Layer

Valence-band offsets and band tailoring in compound strained-layer superlattices

1994 ◽  
Vol 49 (15) ◽  
pp. 10495-10501 ◽  
Author(s):  
San-huang Ke ◽  
Ren-zhi Wang ◽  
Mei-chun Huang
Keyword(s):  
Valence Band ◽  
Band Offsets ◽  
Strained Layer ◽  
Strained Layer Superlattices

Valence Band Offsets of the InxGa1-xAs/GaAs Strained-Layer Superlattice

1990 ◽  
Vol 29 (Part 2, No. 4) ◽  
pp. L556-L558 ◽  
Author(s):  
Kenji Shiraishi ◽  
Takahisa Ohno
Keyword(s):  
Valence Band ◽  
Band Offsets ◽  
Strained Layer ◽  
Strained Layer Superlattice

Erratum: Valence-band offsets and band tailoring in compound strained-layer superlattices

1995 ◽  
Vol 51 (3) ◽  
pp. 2030-2030
Author(s):  
San-huang Ke ◽  
Ren-zhi Wang ◽  
Mei-chun Huang
Keyword(s):  
Valence Band ◽  
Band Offsets ◽  
Strained Layer ◽  
Strained Layer Superlattices

scholarly journals Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Ya-Wei Huan ◽  
Ke Xu ◽  
Wen-Jun Liu ◽  
Hao Zhang ◽  
Dmitriy Anatolyevich Golosov ◽  
...  
Keyword(s):  
Valence Band ◽  
Transition Metal Dichalcogenides ◽  
Three Dimensional ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Band Offsets ◽  
Group Iii ◽  
Nanoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3

2018 ◽  
Vol 8 (7) ◽  
pp. Q3001-Q3006 ◽  
Author(s):  
Chaker Fares ◽  
F. Ren ◽  
David C. Hays ◽  
B. P. Gila ◽  
S. J. Pearton
Keyword(s):  
Valence Band ◽  
Deposition Method ◽  
Band Offsets
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