Effect of interface defect formation on carrier diffusion and luminescence in In0.2Ga0.8As/AlxGa1−xAs quantum wells

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D. H. Rich
1998 ◽  
Vol 73 (20) ◽  
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Author(s):  
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Motoyoshi Baba ◽  
Shyun Koshiba ◽  
Hiroyuki Sakaki ◽  
Hidefumi Akiyama

2020 ◽  
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2004 ◽  
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2012 ◽  
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pp. 184-187 ◽  
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2016 ◽  
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pp. 041304 ◽  
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Jean-Pierre Landesman ◽  
Juan Jiménez ◽  
Christophe Levallois ◽  
Frédéric Pommereau ◽  
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1988 ◽  
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pp. 667-672 ◽  
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T. Kobayashi ◽  
E. Tokunaga

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