Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells
2016 ◽
Vol 34
(4)
◽
pp. 041304
◽
2020 ◽
Vol 124
◽
pp. 114347
2010 ◽
Vol 405
(11)
◽
pp. 2542-2544
◽
2007 ◽
Vol 398
(2)
◽
pp. 248-251
◽
2011 ◽
Vol 8
(3)
◽
pp. 653-661
◽
2001 ◽
Vol 11
(9)
◽
pp. 2335-2339
◽
2011 ◽
Vol 115
(45)
◽
pp. 13304-13319
◽
Keyword(s):