Annihilation of monolayer holes on molecular beam epitaxy grown GaAs surface during annealing as shown by in situ scanning electron microscopy

Naohisa Inoue

doi:10.1116/1.588545

Annihilation of monolayer holes on molecular beam epitaxy grown GaAs surface during annealing as shown by in situ scanning electron microscopy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588545 ◽

1996 ◽

Vol 14 (6) ◽

pp. 3575 ◽

Cited By ~ 3

Author(s):

Naohisa Inoue

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Gaas Surface ◽

Scanning Electron

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Direct comparison of GaAs surface morphology between migration enhanced epitaxy and molecular beam epitaxy using in situ scanning electron microscopy

Applied Physics Letters ◽

10.1063/1.116758 ◽

1996 ◽

Vol 68 (1) ◽

pp. 63-65 ◽

Cited By ~ 22

Author(s):

Yoshikazu Homma ◽

Hiroshi Yamaguchi ◽

Yoshiji Horikoshi

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Surface Morphology ◽

Molecular Beam ◽

Gaas Surface ◽

Migration Enhanced Epitaxy ◽

Scanning Electron

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Asymmetric behavior of monolayer holes after growth in GaAs molecular beam epitaxy revealed by in situ scanning electron microscopy

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)01311-6 ◽

1999 ◽

Vol 201-202 ◽

pp. 141-145 ◽

Cited By ~ 1

Author(s):

K Tanahashi ◽

K Kawamura ◽

N Inoue ◽

Y Homma

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Asymmetric Behavior ◽

Scanning Electron

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In Situ Observation of Monolayer Steps during Molecular Beam Epitaxy of Gallium Arsenide by Scanning Electron Microscopy

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l563 ◽

1994 ◽

Vol 33 (Part 2, No. 4B) ◽

pp. L563-L566 ◽

Cited By ~ 25

Author(s):

Yoshikazu Homma ◽

Jiro Osaka ◽

Naohisa Inoue

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Gallium Arsenide ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

In Situ Observation ◽

Scanning Electron

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In-Situ Scanning Electron Microscopy of Surface Roughening Processes in GaAs Molecular Beam Epitaxy

Defect Recognition and Image Processing in Semiconductors 1997 ◽

10.1201/9781315140810-11 ◽

2017 ◽

pp. 67-70

Author(s):

K. Tanahashi ◽

Y. Kawamura ◽

N. Inoue ◽

Y. Homma ◽

J. Osaka

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Surface Roughening ◽

Scanning Electron

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Nucleation of islands in GaAs molecular beam epitaxy studied by in-situ scanning electron microscopy

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80190-n ◽

1995 ◽

Vol 150 ◽

pp. 107-109 ◽

Cited By ~ 4

Author(s):

N. Inoue ◽

J. Osaka ◽

Y. Homma

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Scanning Electron

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Kinetics Of Islands And Monolayer Steps In Molecular Beam Epitaxy Revealed By In -situ Scanning Electron Microscopy

Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics ◽

10.1109/leosst.1994.700537 ◽

2005 ◽

Author(s):

N. Inoue

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Kinetics Of ◽

Scanning Electron

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Two-dimensional to one-dimensional mode change in GaAs molecular beam epitaxy revealed by in situ scanning electron microscopy

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00938-4 ◽

1997 ◽

Vol 175-176 ◽

pp. 286-291 ◽

Cited By ~ 2

Author(s):

N. Inoue ◽

Y. Kawamura ◽

Y. Homma ◽

J. Osaka ◽

T. Araki ◽

...

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Two Dimensional ◽

Mode Change ◽

One Dimensional ◽

Scanning Electron

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Delayed and continuous nucleation of islands in GaAs molecular beam epitaxy revealed by in situ scanning electron microscopy

Applied Physics Letters ◽

10.1063/1.113919 ◽

1995 ◽

Vol 66 (16) ◽

pp. 2110-2112 ◽

Cited By ~ 11

Author(s):

J. Osaka ◽

N. Inoue ◽

Y. Homma

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Continuous Nucleation ◽

Scanning Electron

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Two Dimensional to Three Dimensional Growth Transition during GaAs Molecular Beam Epitaxy Studied by in-situ Scanning Electron Microscopy.

Shinku ◽

10.3131/jvsj.41.108 ◽

1998 ◽

Vol 41 (3) ◽

pp. 108-110

Author(s):

Katsuto TANAHASHI ◽

Yuichi KAWAMURA ◽

Naohisa INOUE ◽

Yoshikazu HOMMA

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Three Dimensional ◽

Two Dimensional ◽

Dimensional Growth ◽

Scanning Electron

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Asymmetric Behavior of Monolayer Hole and Preferential Nucleation of Three Dimensional Islands in GaAs Molecular Beam Epitaxy Revealed by In-situ Scanning Electron Microscopy.

Hyomen Kagaku ◽

10.1380/jsssj.20.543 ◽

1999 ◽

Vol 20 (8) ◽

pp. 543-548

Author(s):

Katsuto TANAHASHI ◽

Yuichi KAWAMURA ◽

Naohisa INOUE ◽

Yoshikazu HOMMA

Keyword(s):

Electron Microscopy ◽

Scanning Electron Microscopy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Three Dimensional ◽

Asymmetric Behavior ◽

Preferential Nucleation ◽

Scanning Electron

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