Molecular-beam epitaxy growth of II–VI light-emitting devices on GaAs substrates using valved sources for S and Se

1995 ◽  
Vol 13 (2) ◽  
pp. 746
Author(s):  
M. A. L. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Gaas Substrates

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Solid-source molecular beam epitaxy growth and characteristics of resonant cavity light-emitting diodes

1999 ◽  
Author(s):  
Mika J. Saarinen ◽  
Seppo Orsila ◽  
Mika Toivonen ◽  
Pekka Savolainen ◽  
Tiina E. Kuuslahti ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Resonant Cavity ◽  
Molecular Beam Epitaxy Growth ◽  
Light Emitting

Active-Nitrogen-Doped P-Type ZnSe Grown by Gas-Source Molecular Beam Epitaxy for Blue-Light-Emitting Devices

1993 ◽  
Vol 32 (Part 2, No. 12A) ◽  
pp. L1725-L1727 ◽  
Author(s):  
Masayuki Imaizumi ◽  
Yasuyuki Endoh ◽  
Ken-ichi Ohtsuka ◽  
Toshiro Isu ◽  
Masahiro Nunoshita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Blue Light ◽  
Molecular Beam ◽  
Active Nitrogen ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Nitrogen Doped ◽  
Gas Source ◽  
P Type

Molecular beam epitaxy growth of InP layers on GaAs substrates using GaP decomposition source

2001 ◽  
Vol 227-228 ◽  
pp. 260-265 ◽  
Author(s):  
Ratanathammaphan Somchai ◽  
Supachok Thainoi ◽  
Pornchai Changmoang ◽  
Suwat Sopitpan ◽  
Choompol Antarasena
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Gaas Substrates

GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices

2001 ◽  
Vol 40 (Part 1, No. 6A) ◽  
pp. 3953-3959 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Mitsunari Itoh ◽  
Junji Saraie ◽  
Toshiyuki Yasui ◽  
Sanghoon Ha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Molecular Beam ◽  
Si Substrate ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Metalorganic Molecular Beam Epitaxy

1.54 μm Light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy

2001 ◽  
Vol 17 (1-2) ◽  
pp. 65-69 ◽  
Author(s):  
W.-X. Ni ◽  
C.-X. Du ◽  
F. Duteil ◽  
A. Elfving ◽  
G.V. Hansson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Layered Structures ◽  
Light Emitting ◽  
Light Emitting Devices

Molecular beam epitaxy growth of AlGaAs on the (631)-oriented GaAs substrates

2008 ◽  
Vol 26 (3) ◽  
pp. 1093
Author(s):  
V. H. Méndez-García ◽  
M. G. Ramírez-Elías ◽  
A. Gorbatchev ◽  
E. Cruz-Hernández ◽  
J. S. Rojas-Ramírez ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Gaas Substrates
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