In situ pyrometric interferometry monitoring and control of III–V layered structures during molecular-beam epitaxy growth

X. Liu

doi:10.1116/1.588152

In situ pyrometric interferometry monitoring and control of III–V layered structures during molecular-beam epitaxy growth

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588152 ◽

1995 ◽

Vol 13 (2) ◽

pp. 742 ◽

Cited By ~ 6

Author(s):

X. Liu

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Layered Structures ◽

Molecular Beam Epitaxy Growth ◽

Monitoring And Control ◽

And Control

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Methodologies for in situ pyrometric interferometry monitoring and control of molecular beam epitaxy growth of AlAs/GaAs distributed Bragg reflectors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588888 ◽

1996 ◽

Vol 14 (3) ◽

pp. 2151 ◽

Cited By ~ 4

Author(s):

H. P. Lee

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Bragg Reflectors ◽

Distributed Bragg Reflectors ◽

Monitoring And Control ◽

And Control

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Diffuse reflectance spectroscopy for in situ process monitoring and control during molecular beam epitaxy growth of InGaAs/AlGaAs pseudomorphic high electron mobility transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1310660 ◽

2000 ◽

Vol 18 (5) ◽

pp. 2518 ◽

Cited By ~ 3

Author(s):

J. E. Guyer ◽

W. F. Tseng ◽

J. G. Pellegrino

Keyword(s):

Molecular Beam ◽

Diffuse Reflectance Spectroscopy ◽

High Electron Mobility Transistors ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Monitoring And Control ◽

Electron Mobility Transistors ◽

Process Monitoring And Control ◽

And Control

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In-situ characterization of II/VI molecular beam epitaxy growth using reflection high-energy electron diffraction oscillations

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91270-x ◽

1994 ◽

Vol 137 (1-2) ◽

pp. 187-194 ◽

Cited By ~ 12

Author(s):

J.M. Gaines

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Molecular Beam ◽

High Energy ◽

Energy Electron ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

In Situ Characterization

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In-situ probing of the ZnSe metalorganic molecular beam epitaxy growth process by surface photo-interference method

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90443-x ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 376-380 ◽

Cited By ~ 6

Author(s):

S. Tokita ◽

M. Kobayashi ◽

A. Yoshikawa

Keyword(s):

Molecular Beam Epitaxy ◽

Growth Process ◽

Molecular Beam ◽

Interference Method ◽

Molecular Beam Epitaxy Growth ◽

Metalorganic Molecular Beam Epitaxy

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Investigating and manipulating the molecular beam epitaxy growth kinetics of intrinsic magnetic topological insulator MnBi2Te4 with in situ angle-resolved photoemission spectroscopy

Journal of Physics Condensed Matter ◽

10.1088/1361-648x/aba06d ◽

2020 ◽

Vol 32 (47) ◽

pp. 475002 ◽

Cited By ~ 2

Author(s):

Kejing Zhu ◽

Yunhe Bai ◽

Xiyu Hong ◽

Zuhan Geng ◽

Yuying Jiang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Topological Insulator ◽

Growth Kinetics ◽

Molecular Beam ◽

Photoemission Spectroscopy ◽

Molecular Beam Epitaxy Growth ◽

Angle Resolved Photoemission Spectroscopy ◽

Kinetics Of

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In-situ second-harmonic generation study of the molecular beam epitaxy growth of GaAs

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80187-h ◽

1995 ◽

Vol 150 ◽

pp. 92-95

Author(s):

Takahiro Kimura ◽

Chikashi Yamada

Keyword(s):

Molecular Beam Epitaxy ◽

Second Harmonic Generation ◽

Harmonic Generation ◽

Molecular Beam ◽

Second Harmonic ◽

Molecular Beam Epitaxy Growth

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Atomic-level in situ real-space observation of Ga adatoms on GaAs(001)(2×4)-As surface during molecular beam epitaxy growth

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)01304-9 ◽

1999 ◽

Vol 201-202 ◽

pp. 118-123 ◽

Cited By ~ 42

Author(s):

Shiro Tsukamoto ◽

Nobuyuki Koguchi

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Real Space ◽

Atomic Level ◽

Molecular Beam Epitaxy Growth

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The molecular beam epitaxy growth of InGaAs on GaAs(100) studied by in situ scanning tunneling microscopy and reflection high-energy electron diffraction

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585762 ◽

1991 ◽

Vol 9 (4) ◽

pp. 2189 ◽

Cited By ~ 32

Author(s):

C. W. Snyder

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Diffraction ◽

Scanning Tunneling Microscopy ◽

Molecular Beam ◽

High Energy ◽

Scanning Tunneling ◽

Molecular Beam Epitaxy Growth ◽

High Energy Electron ◽

Tunneling Microscopy

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InAs quantum dot evolution observed by in-situ scanning tunneling microscopy during molecular beam epitaxy growth

2008 20th International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.2008.4703062 ◽

2008 ◽

Author(s):

Shiro Tsukamoto

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Dot ◽

Scanning Tunneling Microscopy ◽

Molecular Beam ◽

Scanning Tunneling ◽

Molecular Beam Epitaxy Growth ◽

Tunneling Microscopy ◽

Inas Quantum Dot

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InAs quantum dot evolution observed by in-situ scanning tunneling microscopy during molecular beam epitaxy growth

2008 20th International Conference on Indium Phosphide and Related Materials ◽

10.1109/iciprm.2008.4703061 ◽

2008 ◽

Author(s):

Shiro Tsukamoto

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Dot ◽

Scanning Tunneling Microscopy ◽

Molecular Beam ◽

Scanning Tunneling ◽

Molecular Beam Epitaxy Growth ◽

Tunneling Microscopy ◽

Inas Quantum Dot

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