Molecular-beam epitaxial growth of GaxIn1−xP–GaAs (x∼0.5) double heterojunction laser diodes using solid phosphorus and arsenic valved cracking cells

1995 ◽  
Vol 13 (2) ◽  
pp. 736 ◽  
Author(s):  
J. N. Baillargeon
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Molecular Beam Epitaxial ◽  
Double Heterojunction ◽  
Molecular Beam Epitaxial Growth

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
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