Molecular beam epitaxial growth of InGaAlP visible laser diodes operating at 0.66–0.68 μm at room temperatures
1995 ◽
Vol 13
(2)
◽
pp. 736
◽
1995 ◽
Vol 13
(3)
◽
pp. 683-689
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Keyword(s):
1994 ◽
Vol 28
(1-3)
◽
pp. 51-54
◽
1981 ◽
Vol 10
(2)
◽
pp. 313-325
◽
Molecular beam epitaxial growth of mid-infrared InGaAsSb laser diodes on indium-free GaSb substrates
2004 ◽
Vol 22
(3)
◽
pp. 1460
◽
1997 ◽
Vol 175-176
◽
pp. 883-887
◽
2011 ◽
Vol 334
(1)
◽
pp. 113-117
◽
2000 ◽
Vol 208
(1-4)
◽
pp. 93-99
◽