Monolayer resolved monitoring of AlAs growth with metalorganic molecular beam epitaxy by reflectance anisotropy spectroscopy

1995 ◽  
Vol 13 (1) ◽  
pp. 88 ◽  
Author(s):  
J. Rumberg
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Reflectance Anisotropy ◽  
Metalorganic Molecular Beam Epitaxy

Real Time Control of III-V Semiconductor Surfaces During Movpe Growth by Reflectance Anisotropy Spectroscopy

1993 ◽  
Vol 334 ◽  
Author(s):  
K. Ploska ◽  
W. Richter ◽  
F. Reinhardt ◽  
J. JÖnsson ◽  
J. Rumberg ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Real Time ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Exchange Reactions ◽  
Real Time Control ◽  
Time Resolved ◽  
Reflectance Anisotropy ◽  
Time Control ◽  
Metalorganic Molecular Beam Epitaxy

AbstractReflectance anisotropy spectroscopy (RAS) is presented as real time analytical tool for metalorganic vapourphase epitaxy (MOVPE) of III-V-semiconductors. This optical method derives its surface sensitivity from the anisotropy of surface structures. It is shown that it is possible to monitor with RAS the oxide desorption from the substrate and that the substrate surface conditions thereafter, still in the pregrowth stage, can be correlated with certain reconstructions of the (001)-surfaces of InP and GaAs. The latter is possible through simultaneous RAS and RHEED measurements during MBE (molecular beam epitaxy) or MOMBE (metalorganic molecular beam epitaxy). Characteristic spectral features are also observed for other binary or ternary III-V-semiconductors. Time resolved measurements during growth give monolayer resolution for the growth rate in the case of GaAs. In the study of heterointerface growth exchange reactions between As and P together with their corresponding reaction time constants can be monitored and conclusions for the epitaxial growth procedure can be drawn.

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy

1989 ◽  
Vol 55 (17) ◽  
pp. 1750-1752 ◽  
Author(s):  
C. R. Abernathy ◽  
S. J. Pearton ◽  
R. Caruso ◽  
F. Ren ◽  
J. Kovalchik
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1266-1269 ◽  
Author(s):  
J. D. Mackenzie ◽  
L. Abbaschian ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Plasma Characteristics

Ar ion laser‐assisted metalorganic molecular beam epitaxy of GaAs

1989 ◽  
Vol 54 (4) ◽  
pp. 335-337 ◽  
Author(s):  
H. Sugiura ◽  
R. Iga ◽  
T. Yamada ◽  
M. Yamaguchi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Ion Laser

Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)

1999 ◽  
Vol 595 ◽  
Author(s):  
U. Hömmerich ◽  
J. T. Seo ◽  
J. D. MacKenzie ◽  
C. R. Abernathy ◽  
R. Birkhahn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Excited States ◽  
Room Temperature ◽  
Molecular Beam ◽  
Average Lifetime ◽  
Green Luminescence ◽  
Si Substrates ◽  
Lifetime Analysis ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Er Doped

AbstractWe report on the luminescence properties of Er doped GaN grown prepared by metalorganic molecular beam epitaxy (MOMBE) and solid-source molecular beam epitaxy (SSMBE) on Si substrates. Both types of samples emitted characteristic 1.54 µm PL resulting from the intra-4f Er3+ transition 4I13/2→4I15/2. Under below-gap excitation the samples exhibited very similar 1.54 µm PL intensities. On the contrary, under above-gap excitation GaN: Er (SSMBE) showed ∼80 times more intense 1.54 µm PL than GaN: Er (MOMBE). In addition, GaN: Er (SSMBE) also emitted intense green luminescence at 537 nm and 558 nm, which was not observed from GaN: Er (MOMBE). The average lifetime of the green PL was determined to be 10.8 µs at 15 K and 5.5 µs at room temperature. A preliminary lifetime analysis suggests that the decrease in lifetime is mainly due to the strong thermalization between the 2H11/2 and 4S3/2 excited states. Nonradiative decay processes are expected to only weakly affect the green luminescence.

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