Measurement of AlxGa1−xAs temperature dependent optical constants by spectroscopic ellipsometry

Author(s):  
C. H. Kuo
Materials ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 2002
Author(s):  
Mohamed Abdel-Rahman ◽  
Esam Bahidra ◽  
Ahmed Fauzi Abas

In this paper, the temperature-dependent dielectric properties of vanadium-sesquioxide-based thin films are studied to assess their suitability for thermally tunable filters at optical communication wavelengths. Spectroscopic ellipsometry is utilized to measure the optical constants of vanadium oxide thin films at temperatures ranging from 25 °C to 65 °C. High thermo-optic coefficients (dn/dTs) were observed. The highest dn/dTs, measured at approximately 40 °C, were −8.4 × 10−3/°C and −1.05 × 10−2/°C at 1550 nm and 2000 nm, respectively.


2003 ◽  
Vol 38 (9) ◽  
pp. 773-778 ◽  
Author(s):  
B. Karunagaran ◽  
R. T. Rajendra Kumar ◽  
C. Viswanathan ◽  
D. Mangalaraj ◽  
Sa. K. Narayandass ◽  
...  

2011 ◽  
Vol 8 ◽  
pp. 223-227 ◽  
Author(s):  
R. Yusoh ◽  
M. Horprathum ◽  
P. Eiamchai ◽  
S. Chanyawadee ◽  
K. Aiempanakit

2016 ◽  
Vol 49 (2) ◽  
pp. 528-532 ◽  
Author(s):  
Xiao-Dong Wang ◽  
Bo Chen ◽  
Hai-Feng Wang ◽  
Xin Zheng ◽  
Shi-Jie Liu ◽  
...  

Amorphous silicon (a-Si) films were prepared by radio frequency magnetron sputtering. Spectroscopic ellipsometry (SE) was utilized to detect an ordered-structure fraction in a-Si. The SE analysis of a-Si films with different thicknesses (7.0–140.0 nm) demonstrates that no more than 2.81% of medium-range order exists in the samples, and interestingly, there is a thickness dependence of optical constants for a-Si in the range of 1.5–5.0 eV.


2017 ◽  
Vol 24 (2) ◽  
pp. 026001 ◽  
Author(s):  
Cody V. Cushman ◽  
Brian I. Johnson ◽  
Andrew Martin ◽  
Barry M. Lunt ◽  
Nicholas J. Smith ◽  
...  

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