Fabrication of sub-50-nm gate length n-metal–oxide–semiconductor field effect transistors and their electrical characteristics

Mizuki Ono

doi:10.1116/1.587886

Fabrication of sub-50-nm gate length n-metal–oxide–semiconductor field effect transistors and their electrical characteristics

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587886 ◽

1995 ◽

Vol 13 (4) ◽

pp. 1740 ◽

Cited By ~ 23

Author(s):

Mizuki Ono

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Electrical Characteristics

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.05dc01 ◽

2009 ◽

Vol 48 (5) ◽

pp. 05DC01 ◽

Cited By ~ 20

Author(s):

Tetsuro Hayashida ◽

Yongxun Liu ◽

Takashi Matsukawa ◽

Kazuhiko Endo ◽

Shinich O'uchi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gas Flow ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Flow Ratio ◽

Nitrogen Gas ◽

Gas Flow Ratio

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Validity of mobility universality for scaled metal–oxide–semiconductor field-effect transistors down to 100 nm gate length

Journal of Applied Physics ◽

10.1063/1.1510957 ◽

2002 ◽

Vol 92 (9) ◽

pp. 5228-5232 ◽

Cited By ~ 14

Author(s):

S. Matsumoto ◽

K. Hisamitsu ◽

M. Tanaka ◽

H. Ueno ◽

M. Miura-Mattausch ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length

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Crystalline ZrTiO4 gated p-metal–oxide–semiconductor field effect transistors with sub-nm equivalent oxide thickness featuring good electrical characteristics and reliability

Applied Physics Letters ◽

10.1063/1.4907728 ◽

2015 ◽

Vol 106 (5) ◽

pp. 053508 ◽

Cited By ~ 7

Author(s):

Chao-Yi Wu ◽

Ching-Heng Hsieh ◽

Ching-Wei Lee ◽

Yung-Hsien Wu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Equivalent Oxide Thickness

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Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.024106 ◽

2012 ◽

Vol 51 (2R) ◽

pp. 024106 ◽

Cited By ~ 6

Author(s):

Anil Kumar ◽

Tomoko Mizutani ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Gate Length ◽

Fully Depleted ◽

Gate Width ◽

Onset Voltage

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Effects of Electron Beam Damage on the Electrical Characteristics of n-type Metal-Oxide-Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.1223 ◽

1994 ◽

Vol 33 (Part 1, No. 3A) ◽

pp. 1223-1227 ◽

Cited By ~ 2

Author(s):

Young Jin Jeon ◽

Sin-Chong Park ◽

Soung Soon Chun

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Beam Damage

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Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2Gate Stacks by Post Deposition N2O Plasma Treatment

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.7869 ◽

2005 ◽

Vol 44 (11) ◽

pp. 7869-7875 ◽

Cited By ~ 2

Author(s):

Wen-Tai Lu ◽

Chao-Hsin Chien ◽

Wen-Ting Lan ◽

Tsung-Chieh Lee ◽

Ming-Jui Yang ◽

...

Keyword(s):

Metal Oxide ◽

Plasma Treatment ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Post Deposition

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Fabrication and electrical characteristics of dual-gate ZnO nanorod metal–oxide semiconductor field-effect transistors

Nanotechnology ◽

10.1088/0957-4484/17/11/s16 ◽

2006 ◽

Vol 17 (11) ◽

pp. S327-S331 ◽

Cited By ~ 51

Author(s):

Hyeong-Jin Kim ◽

Chul-Ho Lee ◽

Dong-Wook Kim ◽

Gyu-Chul Yi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Zno Nanorod ◽

Electrical Characteristics ◽

Dual Gate

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The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors

Thin Solid Films ◽

10.1016/j.tsf.2011.09.081 ◽

2012 ◽

Vol 520 (6) ◽

pp. 2166-2169

Author(s):

Moongyu Jang ◽

Seongjae Lee

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Barrier Metal

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Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric

Applied Physics Letters ◽

10.1063/1.3264086 ◽

2009 ◽

Vol 95 (19) ◽

pp. 192113 ◽

Cited By ~ 7

Author(s):

Hong Bae Park ◽

Chang Seo Park ◽

Chang Yong Kang ◽

Seung-Chul Song ◽

Byoung Hun Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Gate Electrode ◽

Capping Layer

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