Validity of mobility universality for scaled metal–oxide–semiconductor field-effect transistors down to 100 nm gate length

S. Matsumoto; K. Hisamitsu; M. Tanaka; H. Ueno; M. Miura-Mattausch; H. J. Mattausch; S. Kumashiro; T. Yamaguchi; S. Odanaka; N. Nakayama

doi:10.1063/1.1510957

Validity of mobility universality for scaled metal–oxide–semiconductor field-effect transistors down to 100 nm gate length

Journal of Applied Physics ◽

10.1063/1.1510957 ◽

2002 ◽

Vol 92 (9) ◽

pp. 5228-5232 ◽

Cited By ~ 14

Author(s):

S. Matsumoto ◽

K. Hisamitsu ◽

M. Tanaka ◽

H. Ueno ◽

M. Miura-Mattausch ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length

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Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.024106 ◽

2012 ◽

Vol 51 (2R) ◽

pp. 024106 ◽

Cited By ~ 6

Author(s):

Anil Kumar ◽

Tomoko Mizutani ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Gate Length ◽

Fully Depleted ◽

Gate Width ◽

Onset Voltage

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The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors

Thin Solid Films ◽

10.1016/j.tsf.2011.09.081 ◽

2012 ◽

Vol 520 (6) ◽

pp. 2166-2169

Author(s):

Moongyu Jang ◽

Seongjae Lee

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Barrier Metal

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Fabrication of 30 nm gate length electrically variable shallow-junction metal–oxide–semiconductor field-effect transistors using a calixarene resist

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589732 ◽

1997 ◽

Vol 15 (6) ◽

pp. 2806 ◽

Cited By ~ 6

Author(s):

T. Sakamoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Shallow Junction

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20-nm-gate-length erbium-/platinum-silicided n-∕p-type Schottky barrier metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3025726 ◽

2008 ◽

Vol 93 (19) ◽

pp. 192112 ◽

Cited By ~ 10

Author(s):

Moongyu Jang ◽

Cheljong Choi ◽

Seongjae Lee

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Barrier Metal ◽

P Type ◽

20 Nm

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Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.024106 ◽

2012 ◽

Vol 51 ◽

pp. 024106 ◽

Cited By ~ 1

Author(s):

Anil Kumar ◽

Tomoko Mizutani ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Gate Length ◽

Fully Depleted ◽

Gate Width ◽

Onset Voltage

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Gate length and temperature dependence of negative differential transconductance in silicon quantum well metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4931662 ◽

2015 ◽

Vol 118 (12) ◽

pp. 124505 ◽

Cited By ~ 7

Author(s):

Clint Naquin ◽

Mark Lee ◽

Hal Edwards ◽

Guru Mathur ◽

Tathagata Chatterjee ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length

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Top-view imaging of 65nm gate length metal-oxide-semiconductor field effect transistors by scanning capacitance microscopy

10.7567/ssdm.2007.p-1-24 ◽

2007 ◽

Author(s):

Y. Naitou ◽

A. Ando ◽

H. Ogiso ◽

S. Kamohara ◽

F. Yano ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Scanning Capacitance Microscopy ◽

Top View

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Electron Holography Characterization of Ultra Shallow Junctions in 30-nm-Gate-Length Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2365 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2365-2368 ◽

Cited By ~ 8

Author(s):

Nobuyuki Ikarashi ◽

Makiko Oshida ◽

Makoto Miyamura ◽

Motofumi Saitoh ◽

Akira Mineji ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Holography ◽

Gate Length ◽

Shallow Junctions ◽

Ultra Shallow Junctions

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Fabrication of sub-50-nm gate length n-metal–oxide–semiconductor field effect transistors and their electrical characteristics

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587886 ◽

1995 ◽

Vol 13 (4) ◽

pp. 1740 ◽

Cited By ~ 23

Author(s):

Mizuki Ono

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Electrical Characteristics

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Fully self-aligned process for fabricating 100 nm gate length enhancement mode GaAs metal-oxide-semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3256624 ◽

2009 ◽

Vol 27 (6) ◽

pp. 3153 ◽

Cited By ~ 13

Author(s):

Xu Li ◽

Richard J. W. Hill ◽

Paolo Longo ◽

Martin C. Holland ◽

Haiping Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Enhancement Mode

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