Electron-beam fabrication and focused ion beam inspection of submicron structured diffractive optical elements

1994 ◽  
Vol 12 (6) ◽  
pp. 3708 ◽  
Author(s):  
C. Dix
Keyword(s):  
Electron Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Diffractive Optical Elements ◽  
Optical Elements

Optimizing the fabrication of diffractive optical elements using a focused ion beam system

2014 ◽  
Author(s):  
A. Vijayakumar ◽  
Ulrike Eigenthaler ◽  
Kahraman Keskinbora ◽  
Gayathri M. Sridharan ◽  
V. Pramitha ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Diffractive Optical Elements ◽  
Optical Elements ◽  
Beam System

Fin Level Defect Isolation Inside a FinFET Using Electron Beam Alteration of Current Flow

2017 ◽  
Author(s):  
H.J. Ryu ◽  
A.B. Shah ◽  
Y. Wang ◽  
W.-H. Chuang ◽  
T. Tong
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Focused Ion Beam ◽  
Current Flow ◽  
Ion Beam ◽  
The Body ◽  
Complete Understanding ◽  
Root Cause ◽  
Transmission Electron ◽  
Defect Isolation

Abstract When failure analysis is performed on a circuit composed of FinFETs, the degree of defect isolation, in some cases, requires isolation to the fin level inside the problematic FinFET for complete understanding of root cause. This work shows successful application of electron beam alteration of current flow combined with nanoprobing for precise isolation of a defect down to fin level. To understand the mechanism of the leakage, transmission electron microscopy (TEM) slice was made along the leaky drain contact (perpendicular to fin direction) by focused ion beam thinning and lift-out. TEM image shows contact and fin. Stacking fault was found in the body of the silicon fin highlighted by the technique described in this paper.

Carbon Coating for Electron Beam Testing and Focus Ion Beam Reconfiguration

1996 ◽  
Author(s):  
P. Perdu ◽  
G. Perez ◽  
M. Dupire ◽  
B. Benteo
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Carbon Coating ◽  
Focused Ion Beam ◽  
Sacrificial Layer ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Fault Analysis ◽  
Voltage Contrast ◽  
The Right

Abstract To debug ASIC we likely use accurate tools such as an electron beam tester (Ebeam tester) and a Focused Ion Beam (FIB). Interactions between ions or electrons and the target device build charge up on its upper glassivation layer. This charge up could trigger several problems. With Ebeam testing, it sharply decreases voltage contrast during Image Fault Analysis and hide static voltage contrast. During ASIC reconfiguration with FIB, it could induce damages in the glassivation layer. Sample preparation is getting a key issue and we show how we can deal with it by optimizing carbon coating of the devices. Coating is done by an evaporator. For focused ion beam reconfiguration, we need a very thick coating. Otherwise the coating could be sputtered away due to imaging. This coating is use either to avoid charge-up on glassivated devices or as a sacrificial layer to avoid short circuits on unglassivated devices. For electron beam Testing, we need a very thin coating, we are now using an electrical characterization method with an insitu control system to obtain the right thin thickness. Carbon coating is a very cheap and useful method for sample preparation. It needs to be tuned according to the tool used.

scholarly journals Nanooptical elements for visual verification

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Alexander Goncharsky ◽  
Anton Goncharsky ◽  
Dmitry Melnik ◽  
Svyatoslav Durlevich
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Mass Production ◽  
Optical Element ◽  
Visual Image ◽  
Zero Order ◽  
Diffractive Optical Elements ◽  
Optical Elements ◽  
Standard Equipment ◽  
Diffractive Element

AbstractThis paper focuses on the development of flat diffractive optical elements (DOEs) for protecting banknotes, documents, plastic cards, and securities against counterfeiting. A DOE is a flat diffractive element whose microrelief, when illuminated by white light, forms a visual image consisting of several symbols (digits or letters), which move across the optical element when tilted. The images formed by these elements are asymmetric with respect to the zero order. To form these images, the microrelief of a DOE must itself be asymmetric. The microrelief has a depth of ~ 0.3 microns and is shaped with an accuracy of ~ 10–15 nm using electron-beam lithography. The DOEs developed in this work are securely protected against counterfeiting and can be replicated hundreds of millions of times using standard equipment meant for the mass production of relief holograms.

Layered nano-gratings by electron beam writing to form 3-level diffractive optical elements for 3D phase-offset holographic lithography

Nanoscale ◽  
2015 ◽  
Vol 7 (47) ◽  
pp. 19905-19913 ◽  
Author(s):  
Liang (Leon) Yuan ◽  
Peter R. Herman
Keyword(s):  
Electron Beam ◽  
Holographic Lithography ◽  
Diffractive Optical Elements ◽  
Optical Elements ◽  
Phase Offset

Three-level nano-grating phase masks fabricated by e-beam lithography provided a diamond-like symmetry in holographic exposure and promised 3D complete stopbands.

scholarly journals Comparative study of plasmonic antennas fabricated by electron beam and focused ion beam lithography

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Michal Horák ◽  
Kristýna Bukvišová ◽  
Vojtěch Švarc ◽  
Jiří Jaskowiec ◽  
Vlastimil Křápek ◽  
...  
Keyword(s):  
Electron Beam ◽  
Comparative Study ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography

scholarly journals The Relationships of Microscopic Evolution to Resistivity Variation of a FIB-Deposited Platinum Interconnector

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 588
Author(s):  
Chaorong Zhong ◽  
Ruijuan Qi ◽  
Yonghui Zheng ◽  
Yan Cheng ◽  
Wenxiong Song ◽  
...  
Keyword(s):  
Electron Beam ◽  
Focused Ion Beam ◽  
Spherical Aberration ◽  
Ion Beam ◽  
Electrical Contact ◽  
Heating Process ◽  
Comprehensive Understanding ◽  
Irreversible Damage ◽  
Resistivity Variation

Depositing platinum (Pt) interconnectors during the sample preparation process via a focused ion beam (FIB) system is an inescapable procedure for in situ transmission electron microscopy (TEM) investigations. To achieve good electrical contact and avoid irreversible damage in practical samples, the microscopic evolution mechanism of FIB-deposited Pt interconnectors need a more comprehensive understanding, though it is known that its resistivity could be affected by thermal annealing. In this work, an electron-beam FIB-deposited Pt interconnector was studied by advanced spherical aberration (Cs)-corrected TEM combined with an in situ heating and biasing system to clarify the relationship of microscopic evolution to resistivity variation. During the heating process, the Pt interconnector underwent crystallization, organic matter decomposition, Pt nanocrystal growth, grain connection, and conductive path formation, which are combined actions to cause several orders of magnitude of resistivity reduction. The comprehensive understanding of the microscopic evolution of FIB-deposited Pt material is beneficial, not only for optimizing the resistance performance of Pt as an interconnector, but also for understanding the role of C impurities with metal materials. For the purpose of wiring, annealed electron-beam (EB)-deposited Pt material can be recommended for use as an interconnector in devices for research purposes.

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