High-speed single-layer-resist process and energy-dependent aspect ratios for 0.2-μm electron-beam lithography

1994 ◽  
Vol 12 (6) ◽  
pp. 3874 ◽  
Author(s):  
Fumio Murai
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Speed ◽  
Single Layer ◽  
Aspect Ratios ◽  
Energy Dependent

Y shape gate formation in single layer of ZEP520A using 3D electron beam lithography

2015 ◽  
Vol 143 ◽  
pp. 37-40 ◽  
Author(s):  
Jinhai Shao ◽  
Sichao Zhang ◽  
Jianpeng Liu ◽  
Bing-Rui Lu ◽  
Nit Taksatorn ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Single Layer ◽  
3D Electron

A fine emitter transistor fabricated by electron-beam lithography for high-speed bipolar LSI's

1986 ◽  
Vol 7 (7) ◽  
pp. 425-427 ◽  
Author(s):  
Y. Tamaki ◽  
F. Murai ◽  
Y. Kawamoto ◽  
K. Uehara ◽  
A. Hayasaka ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Speed

Sub-half-micrometre gratings using e-beam lithography and reactive ion etching

1991 ◽  
Vol 69 (3-4) ◽  
pp. 508-511
Author(s):  
M. Fallahi ◽  
R. Barber
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Light Attenuation ◽  
Reactive Ion Etching ◽  
Single Layer ◽  
Second Order ◽  
High Quality ◽  
Ion Etching ◽  
Wave Guides

A simple, manufacturable technique for the generation of sub-half-micrometre gratings in GaAs is demonstrated. The technique uses a single layer of polymethylmethacrylate photoresist, electron-beam lithography, and BCl3–He reactive ion etching to achieve high-quality second-order gratings. Good light attenuation properties are demonstrated for planar and ridge wave guides.

Sign in / Sign up

Export Citation Format

Share Document