Secondary electron line scans over high resolution resist images: Theoretical and experimental investigation of induced local electrical field effects

1994 ◽  
Vol 12 (6) ◽  
pp. 3555 ◽  
Author(s):  
Luca Grella
Keyword(s):  
Experimental Investigation ◽  
High Resolution ◽  
Secondary Electron ◽  
Electrical Field ◽  
Field Effects ◽  
Electron Line

Ultra-high resolution SEMI-in-lens type FE-SEM, JSM-6320F, with strong magnetic-field lens with built-in secondary-electron detector

1994 ◽  
Vol 52 ◽  
pp. 484-485
Author(s):  
T. Miyokawa ◽  
H. Kazumori ◽  
S. Nakagawa ◽  
C. Nielsen
Keyword(s):  
High Resolution ◽  
Secondary Electron ◽  
Spherical Aberration ◽  
Incident Beam ◽  
Chromatic Aberration ◽  
Magnetic Flux Density ◽  
Objective Lens ◽  
Electron Detector ◽  
High Resolution Images ◽  
Working Distance

We have developed a strongly excited objective lens with a built-in secondary electron detector to provide ultra-high resolution images with high quality at low to medium accelerating voltages. The JSM-6320F is a scanning electron microscope (FE-SEM) equipped with this lens and an incident beam divergence angle control lens (ACL).The objective lens is so strongly excited as to have peak axial Magnetic flux density near the specimen surface (Fig. 1). Since the speciien is located below the objective lens, a large speciien can be accomodated. The working distance (WD) with respect to the accelerating voltage is limited due to the magnetic saturation of the lens (Fig.2). The aberrations of this lens are much smaller than those of a conventional one. The spherical aberration coefficient (Cs) is approximately 1/20 and the chromatic aberration coefficient (Cc) is 1/10. for accelerating voltages below 5kV. At the medium range of accelerating voltages (5∼15kV). Cs is 1/10 and Cc is 1/7. Typical values are Cs-1.lmm. Cc=l. 5mm at WD=2mm. and Cs=3.lmm. Cc=2.9 mm at WD=5mm. This makes the lens ideal for taking ultra-high resolution images at low to medium accelerating voltages.

High Resolution Low Loss Microscopy of Crystalline Surfaces

1980 ◽  
Vol 38 ◽  
pp. 162-163
Author(s):  
William Krakow ◽  
Alec N. Broers
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Surface Topography ◽  
Secondary Electron ◽  
Objective Lens ◽  
Surface Imaging ◽  
Low Loss ◽  
Fine Grained ◽  
Scanning Electron ◽  
Crystalline Surfaces

Low-loss scanning electron microscopy can be used to investigate the surface topography of solid specimens and provides enhanced image contrast over secondary electron images. A high resolution-condenser objective lens has allowed the low-loss technique to resolve separations of Au nucleii of 50Å and smaller dimensions of 25Å in samples coated with a fine grained carbon-Au-palladium layer. An estimate of the surface topography of fine grained vapor deposited materials (20 - 100Å) and the surface topography of underlying single crystal Si in the 1000 - 2000Å range has also been investigated. Surface imaging has also been performed on single crystals using diffracted electrons scattered through 10−2 rad in a conventional TEM. However, severe tilting of the specimen is required which degrades the resolution 15 to 100 fold due to image forshortening.

Electrical field effects induced in membranes of developing chloroplasts

Planta ◽  
1980 ◽  
Vol 147 (5) ◽  
pp. 396-404 ◽  
Author(s):  
G. Pilwat ◽  
R. Hampp ◽  
U. Zimmermann
Keyword(s):  
Electrical Field ◽  
Field Effects
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