Selective dry etching in a high density plasma for 0.5 μm complementary metal–oxide–semiconductor technology

1994 ◽  
Vol 12 (1) ◽  
pp. 427 ◽  
Author(s):  
J. Givens
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Dry Etching ◽  
Metal Oxide Semiconductor ◽  
High Density ◽  
Oxide Semiconductor ◽  
Semiconductor Technology ◽  
Density Plasma

Mechanism and CHARM2 Evaluation of P-Channel Metal Oxide Semiconductor Threshold Voltage Drop during High Density Plasma Heat-up Process

2009 ◽  
Vol 48 (8) ◽  
pp. 08HF02 ◽  
Author(s):  
Dong-Hwan Kim ◽  
Jeongyun Lee ◽  
Min-Sung Kim ◽  
Ken Tokashiki ◽  
Kyoungsub Shin ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Voltage Drop ◽  
Metal Oxide Semiconductor ◽  
High Density ◽  
Oxide Semiconductor ◽  
Density Plasma
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